Influence of alkylphosphonic acid grafting on the electronic and magnetic properties of La2/3Sr1/3MnO3 surfaces
Source abstract
Abstract
Self-assembled monolayers (SAMs) are highly promising materials for molecular engineering of electronic and spintronics devices thanks to their surface functionalization properties. In this direction, alkylphosphonic acids have been used to functionalize the most common ferromagnetic electrode in organic spintronics: La2/3Sr1/3MnO3 (LSMO). However, a study on the influence of SAMs grafting on LSMO electronic and magnetic properties is still missing. In this letter, we probe the influence of alkylphosphonic acids-based SAMs on the electronic and magnetic properties of the LSMO surface using different spectroscopies. We observe by X-ray photoemission and X-ray absorption that the grafting of the molecules on the LSMO surface induces a reduction of the Mn oxidation state. Ultraviolet photoelectron spectroscopy measurements also show that the LSMO work function can be modified by surface dipoles opening the door to both tune the charge and spin injection efficiencies in organic devices such as organic light-emitting diodes.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Molecular Junctions and Nanostructures · Perovskite Materials and Applications · Organic Light-Emitting Diodes Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (36)
Show source-provided references
1. Aviram · Chem. Phys. Lett. · 1974 · 29 · 27710.1016/0009-2614(74)85031-1 ↗
2. Son · Curr. Appl. Phys. · 2013 · 13 · 115710.1016/j.cap.2013.06.014 ↗
3. Ulman · Chem. Rev. · 1996 · 96 · 153310.1021/cr9502357 ↗
4. Campbell · Phys. Rev. B · 1996 · 54 · 1432110.1103/PhysRevB.54.R14321 ↗
5. Queffélec · Chem. Rev. · 2012 · 112 · 377710.1021/cr2004212 ↗
6. Hotchkiss · Acc. Chem. Res. · 2012 · 45 · 33710.1021/ar200119g ↗
7. Paz · J. Nanotechnol. · 2011 · 2 · 845
8. Tatay · ACS Nano · 2012 · 6 · 875310.1021/nn302458z ↗
9. Galbiati · Adv. Mater. · 2012 · 24 · 642910.1002/adma.201203136 ↗
10. Dagotto · Phys. Rep. · 2001 · 344 · 110.1016/S0370-1573(00)00121-6 ↗
11. Park · Phys. Rev. Lett. · 1998 · 81 · 195310.1103/PhysRevLett.81.1953 ↗
12. Ohresser · Rev. Sci. Instrum. · 2014 · 85 · 01310610.1063/1.4861191 ↗
13. Droghetti · Phys. Rev. B · 2014 · 89 · 09441210.1103/PhysRevB.89.094412 ↗
14. Alloway · J. Phys. Chem. B · 2003 · 107 · 1169010.1021/jp034665+ ↗
15. Evans · Clay Miner. · 1982 · 17 · 47710.1180/claymin.1982.017.4.11 ↗
16. Galakhov · Phys. Rev. B · 2002 · 65 · 11310210.1103/PhysRevB.65.113102 ↗
17. Liao · J. Cryst. Growth · 2008 · 310 · 386110.1016/j.jcrysgro.2008.05.050 ↗
18. Rao · Adv. Mater. Res. · 2011 · 150–151 · 908
19. Monsen · Surf. Sci. · 2012 · 606 · 136010.1016/j.susc.2012.04.018 ↗
20. Mullica · Phys. Rev. B · 1985 · 31 · 4039R10.1103/PhysRevB.31.4039 ↗
21. Poggini · J. Phys. Chem. C · 2014 · 118 · 1363110.1021/jp5026619 ↗
22. Hani Dulli · Phys. Rev. B · 2000 · 62 · 14629R10.1103/PhysRevB.62.R14629 ↗
23. Kumigashira · Appl. Phys. Lett. · 2003 · 82 · 343010.1063/1.1575932 ↗
24. Song · Surf. Interface Anal. · 2013 · 45 · 114410.1002/sia.5240 ↗
25. Nori · J. Appl. Phys. · 2014 · 115 · 03351810.1063/1.4862909 ↗
26. Li · J. Phys. Chem. C · 2011 · 115 · 1694710.1021/jp112064y ↗
27. Burnus · Phys. Rev. B · 2008 · 77 · 12512410.1103/PhysRevB.77.125124 ↗
28. Sahu · Phys. Rev. B · 2002 · 66 · 14441510.1103/PhysRevB.66.144415 ↗
29. Abbate · Phys. Rev. B · 1992 · 46 · 451110.1103/PhysRevB.46.4511 ↗
30. Stadler · Appl. Phys. Lett. · 1999 · 75 · 338410.1063/1.125359 ↗
31. Malavolti · Chem. Commun. · 2013 · 49 · 1150610.1039/c3cc46868b ↗
32. Chen · Phys. Rev. Lett. · 1995 · 75 · 15210.1103/PhysRevLett.75.152 ↗
33. Park · Nature · 1998 · 392 · 79410.1038/33883 ↗
34. Paniagua · J. Phys. Chem. C · 2008 · 112 · 780910.1021/jp710893k ↗
35. Häming · Phys. Rev. B · 2009 · 79 · 15541810.1103/PhysRevB.79.155418 ↗
36. Bergenti · Org. Electron. · 2004 · 5 · 30910.1016/j.orgel.2004.10.004 ↗