journal article·2019-11

Band bending at the ZnO(0001)-Zn surface produced by electropositive, electronegative and atmospheric adsorbates

Ezequiel Tosi, David Comedi, Guillermo Zampieri

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Abstract

Abstract We have analysed the surface band bending (SBB) at the clean ZnO(0001)-Zn surface and after its modification by electropositive, electronegative and atmospheric adsorbates. The evolution of the band bending with increasing adsorption was monitored by measuring core-level and valence-band X-ray photoelectron spectra. We found that the SBB produced by the adsorption of electropositive elements was always downwards, reaching in all cases the limit imposed by the crossing of the conduction-band minimum with the Fermi level. The adsorption of electronegative elements produced always upward band bending, but in this case a pinning of the SBB was observed that kept the valence-band maximum far from the Fermi level. A self-consistent equation relating the adsorbate level occupation with the band bending is shown to qualitatively reproduce the observed SBB pinning effect. In contrary to the commonly assumed upwards SBB for the ZnO/air interface, a downward SBB was observed after exposing the clean surface to atmospheric air. A downward SBB was also observed when the surface was bombarded with 1 keV Ar+ in vacuum.
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Research context

OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Copper-based nanomaterials and applications

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References (35)

Show source-provided references
1. Band bending in semiconductors: chemical and physical consequences at surfaces and interfaces10.1021/cr3000626 ↗
2. Surface science studies of gas sensing materials: SnO210.3390/s6101345 ↗
3. ZnO nanowire UV photodetectors with high internal gain10.1021/nl070111x ↗
4. Photoinduced oxygen release and persistent photoconductivity in ZnO nanowires10.1186/1556-276X-6-404 ↗
5. Effects of postgrowth annealing treatment on the photoluminescence of zinc oxide nanorods10.1063/1.2200593 ↗
6. Photoluminescence of zinc oxide nanowires: the effect of surface band bending10.5402/2012/950354 ↗
7. Study of the photoluminescence emission line at 3.33 eV in ZnO films10.1063/1.4733952 ↗
8. The shell effect on the room temperature photoluminescence from ZnO/MgO core/shell nanowires: exciton–phonon coupling and strain10.1088/1361-6528/aa7454 ↗
9. Band bending in field emission spectroscopy from the zinc oxide (0001) polar face10.1002/pssa.2210630228 ↗
10. Specific defects, surface band bending and characteristic green emissions of ZnO10.1039/b926427b ↗
11. Work function and band bending on clean cleaved zinc oxide surfaces10.1016/0039-6028(79)90685-X ↗
12. Tuning the band bending and controlling the surface reactivity at polar and nonpolar surfaces of ZnO through phosphonic acid binding10.1021/acsami.6b10309 ↗
13. On the optical band gap of zinc oxide10.1063/1.367375 ↗
14. The exciton spectrum of ZnO10.1016/0022-3697(60)90104-9 ↗
15. A comprehensive review of ZnO materials and devices10.1063/1.1992666 ↗
16. The isoelectric points of solid oxides, solid hydroxides, and aqueous hydroxo complex systems10.1021/cr60234a002 ↗
17. Piezoelectricity and conductivity in ZnO and CdS10.1103/PhysRevLett.4.505 ↗
18. Zinc oxide—from synthesis to application: a review10.3390/ma7042833 ↗
19. Photoemission studies of barrier heights in metal–semiconductor interfaces and heterojunctions10.1016/S0169-4332(00)00435-9 ↗
20. Ordered phases of Se adsorbed on Au(111)
21. Typical room-temperature resistivities of nominally undoped, hydrothermally grown ZnO wafers are within the 10-400 Ω cm range [E. D. Kolb, R. A. Laudise, (1966). Hydrothermally grown ZnO crystals of low and intermediate resistivity, Journal of the American Ceramic Society 49, 302-30510.1111/j.1151-2916.1966.tb13268.x ↗
22. K. Maeda, M. Sato, I. Niikura, T. Fukuda, (2005). Growth of 2 inch ZnO bulk single crystal by the hydrothermal method. Semiconductor Science and Technology, 20(4), S49-S5410.1088/0268-1242/20/4/006 ↗
23. R. Erdélyi, T. Nagata, D. J. Rogers, F. H. Teherani, Z. E. Horváth, Z. Lábadi, Z. Baji, Y. Wakayama, J. Volk, (2011). Investigations into the impact of the template layer on ZnO nanowire arrays made using low temperature wet chemical growth, Crystal Growth & Design 11, 2515-251910.1021/cg2002755 ↗
24. H. Morkoç, Ü. Özgür, (2009). Zinc Oxide: Fundamentals, Materials and Device Technology. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim]. Using an electron mobility of 200 cm2/V.s and electron effective mass of 0.29me [H. Morkoç, Ü. Özgür (2009). Zinc Oxide: Fundamentals, Materials and Device Technology. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim], where me is the electron rest mass, these values are found, within the non-degenerate semiconductor approximation, to correspond to the EC-EF = 0.18-0.27 eV range, which is in agreement with our experimental result of EC-EF = 0.25 eV.10.1002/9783527623945 ↗
25. Electronic structure of ZnO(0001) studied by angle-resolved photoelectron spectroscopy10.1016/S0039-6028(96)01181-8 ↗
26. Experimental observation of bulk band dispersions in the oxide semiconductor ZnO using soft x-ray angle-resolved photoemission spectroscopy10.1063/1.3116223 ↗
27. Angle-resolved photoemission and quasiparticle calculation of ZnO: the need for d band shift in oxide semiconductors
28. Controlling the work function of ZnO and the energy-level alignment at the interface to organic semiconductors with a molecular electron acceptor10.1103/PhysRevB.87.155311 ↗
29. Chemistry of copper overlayers on zinc oxide single-crystal surfaces: model active sites for Cu/ZnO methanol synthesis catalysts10.1021/ja00200a033 ↗
30. Many-electron singularity in X-ray photoemission and X-ray line spectra from metals
31. Atomic subshell photoionization cross sections and asymmetry parameters: 1 < Z < 10310.1016/0092-640X(85)90016-6 ↗
32. We used λ(Zn2p_(3/2)) = 11.3 Å
33. Space-charge transfer in hybrid inorganic-organic systems10.1103/PhysRevLett.111.226802 ↗
34. Tuning the work function of GaN with organic molecular acceptors10.1103/PhysRevB.93.125309 ↗
35. The chemistry and physics of zinc oxide surfaces10.1016/j.progsurf.2006.12.002 ↗