Interstitial chromium behaviour in silicon during rapid thermal annealing

journal article·1989-01

J. Zhu, D. Barbier, L. Mayet, M. Gavand, G. Chaussemy

Applied Surface Science· Volume 36· Issue 1-4

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OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Semiconductor materials and interfaces

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Show source-provided references

1. 1986

2. Pensl · 1984 · 347

3. Barbier · J. Appl. Phys. · 1987 · 61 · 15610.1063/1.338848 ↗

4. Defects in Electronic Materials

5. Ludwig · 1962 · Vol. 13 · 223

6. Conzelmann · Appl. Phys. A · 1983 · 30 · 16910.1007/BF00620536 ↗

7. Weber · Appl. Phys. A · 1983 · 30 · 110.1007/BF00617708 ↗