Impact of germanium substrate orientation on morphological and structural properties of graphene grown by CVD method
Source abstract
Abstract
Abstract In this paper we study graphene synthesized on undoped (001), (110), and (111) Ge substrates, and show how the surface orientation and reconstruction affect its morphological and structural properties. The article presents the first attempt to explain the impact of germanium surface reconstruction on the shape and the density of graphene nuclei as well as on the material's stress and doping levels. Our findings suggest that graphene obtained on Ge(001) is the most uniform, with low doping (1.5 × 1012 cm−2) and low strain level (−0.1%). Graphene on Ge(110) appears to be highly compressed (−0.5%) while graphene on Ge(111) exhibits doping reaching 5 × 1013 cm−2. These results help to better understand the dynamics of graphene growth on germanium and indicate Ge(001), in terms of its structural properties, as the most promising orientation for the future CMOS applications.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · Semiconductor materials and devices · Diamond and Carbon-based Materials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (54)
Show source-provided references
1. Electric field in atomically thin carbon films10.1126/science.1102896 ↗
2. Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper10.1126/sciadv.1500222 ↗
3. Fine structure constant defines visual transparency of graphene10.1126/science.1156965 ↗
4. Single sheet functionalized graphene by oxidation and thermal expansion of graphite10.1021/cm0630800 ↗
5. Laser-induced graphene by multiple lasing: toward electronics on cloth, paper, and food10.1021/acsnano.7b08539 ↗
6. Large area synthesis of high quality and uniform graphene films on copper foils10.1126/science.1171245 ↗
7. Graphene epitaxy by chemical vapor deposition on SiC10.1021/nl200390e ↗
8. Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition10.1021/nl801827v ↗
9. Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition10.1038/srep02666 ↗
10. STM investigation of single layer graphite structures produced on Pt(111) by hydrocarbon decomposition10.1016/0039-6028(92)90183-7 ↗
11. Structural coherency of graphene on Ir(111)10.1021/nl0728874 ↗
12. Epitaxial graphene on SiC: a review of growth and characterization10.3390/cryst6050053 ↗
13. Substrate orientation: a way towards higher quality monolayer graphene growth on 6H-SiC(0001)10.1016/j.susc.2009.05.005 ↗
14. Charge carrier concentration and offset voltage in quasi-free-standing monolayer chemical vapor deposition graphene on SiC10.1016/j.carbon.2016.01.093 ↗
15. Controlling the orientation, edge geometry, and thickness of chemical vapor deposition graphene10.1021/nn3049297 ↗
16. Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition10.1021/nl201566c ↗
17. Direct growth of graphene film on germanium substrate
18. The CVD graphene transfer procedure introduces metallic impurities which alter the graphene electrochemical properties10.1039/C3NR05230C ↗
19. Electronic and mechanical properties of graphene–germanium interfaces grown by chemical vapor deposition10.1021/acs.nanolett.5b02833 ↗
20. Growth and electronic structure of graphene on semiconducting Ge(110)10.1016/j.carbon.2017.06.079 ↗
21. Large-area high-quality graphene on Ge(001)/Si(001) substrates10.1039/C6NR01329E ↗
22. Graphene growth on Ge(100)/Si(100) substrates by CVD method10.1038/srep21773 ↗
23. Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium10.1126/science.1252268 ↗
24. Investigating the CVD synthesis of graphene on Ge(100): toward layer-by-layer growth10.1021/acsami.6b11701 ↗
25. Graphene grown on Ge(001) from atomic source10.1016/j.carbon.2014.03.042 ↗
26. On the rotational alignment of graphene domains grown on Ge(110) and Ge(111)10.1557/mrc.2015.63 ↗
27. Surface morphology, structural and electronic properties of graphene on Ge(111) via direct deposition of solid-state carbon atoms10.1016/j.tsf.2017.08.031 ↗
28. Graphene-induced Ge (001) surface faceting10.1016/j.susc.2015.12.035 ↗
29. The study of the interactions between graphene and Ge(001)/Si(001)10.1007/s12274-017-1575-6 ↗
30. Early oxidation stages of germanium substrate in the graphene/Ge(001) system10.1016/j.carbon.2019.04.036 ↗
31. Pseudo Hall–Petch strength reduction in polycrystalline graphene10.1021/nl400542n ↗
32. How graphene islands are unidirectionally aligned on the Ge(110) surface10.1021/acs.nanolett.6b00486 ↗
33. Growth process of III-V compound semiconductors by migration-enhanced epitaxy10.1016/0022-0248(90)90382-U ↗
34. Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition10.1016/j.carbon.2011.05.047 ↗
35. The graphene/n-Ge(110) interface: structure, doping, and electronic properties10.1039/C8NR00053K ↗
36. Influence of hydrogen intercalation on graphene/Ge(0 0 1)/Si(0 0 1) interface10.1016/j.apsusc.2018.04.029 ↗
37. Structural phase transition on Si(001) and Ge(001) surfaces10.1080/01411599508200394 ↗
38. Electronic structure of the high-temperature Ge(1 0 0) surface studied by valence band photoemission10.1016/S0039-6028(03)00693-9 ↗
39. Surface phase transitions of Ge(100) from temperature-dependent valence-band photoemission10.1103/PhysRevB.57.14654 ↗
40. Time-resolved structural study of low-index surfaces of germanium near its bulk melting temperature10.1103/PhysRevB.64.085410 ↗
41. High-temperature phase transitions at the Ge(110) surface10.1016/S0039-6028(99)01025-0 ↗
42. Reconstructions and phase transition of clean Ge(110)10.1016/j.susc.2013.10.023 ↗
43. Mönch · 2001
44. Metallization and incomplete melting of a semiconductor surface at high temperature10.1103/PhysRevLett.72.2227 ↗
45. Optical separation of mechanical strain from charge doping in graphene10.1038/ncomms2022 ↗
46. Raman spectroscopy of highly pressurized graphene membranes10.1063/1.4952972 ↗
47. Raman spectroscopy of electrochemically gated graphene transistors: geometrical capacitance, electron-phonon, electron-electron, and electron-defect scattering10.1103/PhysRevB.91.205413 ↗
48. Electrostatic doping in semiconductor devices10.1109/TED.2017.2712761 ↗
49. Electrostatic doping of graphene through ultrathin hexagonal boron nitride films10.1021/nl202131q ↗
50. Raman spectroscopy as probe of nanometre-scale strain variations in graphene10.1038/ncomms9429 ↗
51. Hydrogen intercalation of CVD graphene on germanium (001) – strain and doping analysis using Raman spectroscopy10.1016/j.apsusc.2018.12.104 ↗
52. The structural and electrical evolution of chemical vapor deposition grown graphene by electron beam irradiation induced disorder10.1016/j.carbon.2013.03.030 ↗
53. Interpretation of Raman spectra of disordered and amorphous carbon10.1103/PhysRevB.61.14095 ↗
54. Quantifying defects in graphene via Raman spectroscopy at different excitation energies10.1021/nl201432g ↗