Area selective grafting of siloxane molecules on low-k dielectric with respect to copper surface
Source abstract
Abstract
Abstract The selective pore sealing of porous organosilica glass (OSG k = 2.4) dielectrics by self-assembled monolayers (SAM) is studied, using three precursors: (3-trimethoxysilylpropyl) diethylenetriamine (DETA), 3-aminopropyltrimethoxysilane (APTMS) and trimethylmethoxysilane (TMMS), combined with a citric-acid based metal surface cleaning. The sealing effectiveness of the SAM films derived from amino-containing precursors is demonstrated. The selectivity of the SAM grafting to the dielectric surface with respect to the copper surface is investigated. Post-SAM deposition cleaning in citric acid-based solution leads to desorption of the amino-containing precursors from the copper surface while the low-k surface remains partially covered and sealed. On copper, the SAM cleaning process occurs through interface copper oxide removal, by means of a lift-off mechanisms.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Copper Interconnects and Reliability · Molecular Junctions and Nanostructures · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
Show source-provided references
1. Low dielectric constant materials for microelectronics10.1063/1.1567460 ↗
2. A.S. Valeev, G.Y. Krasnikov, V.A. Gvozdev, P.I. Kuznetsov, The method of producing a multilevel copper metallization with ultra-low dielectric constant, RU patent 2548523, 2013, 17 December.
3. Dual damascene: a ulsi wiring technology
4. Low damage damascene patterning of SiCO(H) low-k dielectrics
5. Porosity scaling strategies for low-k films10.1557/jmr.2015.313 ↗
6. Toward successful integration of porous low-k materials: strategies addressing plasma damage10.1149/2.0081501jss ↗
7. Surface and grain boundary scattering studied in beveled polycrystalline thin copper films10.1116/1.1771666 ↗
8. L. Zhao, Z. Tokei, G. Gischia, H. Volders, G. Beyer, A new perspective of barrier material evaluation and process optimization, in Proc. IITC, 2009, p. 206. https://doi.org/10.1109/IITC.2009.5090389.10.1109/IITC.2009.5090389 ↗
9. Ta penetration into template-type porous low-k material during atomic layer deposition of TaN10.1063/1.2121937 ↗
10. Effect of UV wavelength on the hardening process of porogen-containing and porogen-free ultralow-k plasma-enhanced chemical vapor deposition dielectrics10.1116/1.3572063 ↗
11. Pore sealing of porous ultralow-k dielectrics by self-assembled monolayers combined with atomic layer deposition10.1149/2.012202ssl ↗
12. Study of wet surface activation routes to enable the deposition of monomolecular organic thin films on k 2.0 porous dielectrics10.1149/2.017401jss ↗
13. Surface-confined activation of ultra low-k dielectrics in CO2 plasma10.1063/1.4955021 ↗
14. Selective self-assembled monolayer coating to enable Cu-to-Cu connection in dual damascene vias10.1016/j.mee.2012.12.028 ↗
15. Pore sealing of k 2.0 dielectrics assisted by self-assembled monolayers deposited from vapor phase10.1016/j.mee.2013.08.007 ↗
16. Impact of plasma pretreatment and pore size on the sealing of ultra-low-k dielectrics by self-assembled monolayers10.1021/la404165n ↗
17. A. Forster, C. Wagner, J. Schuster, S. Gemming, Theoretical investigation of in situ k-restore processes for damaged ultra-low-k materials, in: Proc. IITC/MAM 2015, 2015, pp. 29–32, https://doi.org/10.1109/IITC-MAM.2015.7325606.10.1109/IITC-MAM.2015.7325606 ↗
18. Influence of thermal cycles on the silylation process for recovering k-value and chemical structure of plasma damaged ultra-low-k materials10.1016/j.mee.2011.04.021 ↗
19. Modification of organosilicate glasses low-k films under extreme and vacuum ultraviolet radiation10.1063/1.4795792 ↗
20. Low-k films modification under EUV and VUV radiation10.1088/0022-3727/47/2/025102 ↗
21. Mechanistic study of plasma damage of low k dielectric surfaces10.1116/1.2834562 ↗
22. M.R. Baklanov, P.S. Ho, E. Zschech, John Wiley and Sons, Ltd., 2012. [link]. https://doi.org/10.1002/9781119963677.ins.10.1002/9781119963677.ins ↗
23. Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN10.1557/opl.2013.716 ↗
24. Self-assembled monolayers as model substrates for atomic layer deposition10.1557/PROC-812-F2.2 ↗
25. Low damage cryogenic etching of porous organosilicate low-k materials using SF6/O2/SiF410.1149/2.001306jss ↗
26. Non-destructive characterisation of porous low-k dielectric films10.1016/S0167-9317(02)00807-9 ↗
27. Quantitative characterization of pore stuffing and unstuffing for postporosity plasma protection of low-k materials10.1116/1.4896759 ↗
28. Effective optical properties of non-absorbing nanoporous thin films10.1016/j.tsf.2005.08.173 ↗
29. Formation and organization of amino terminated self-assembled layers on Si(001) surface10.1007/s11671-007-9071-7 ↗
30. Chemical vapor deposition of three aminosilanes on silicon dioxide: surface characterization, stability, effects of silane concentration, and cyanine dye adsorption10.1021/la102447y ↗
31. Surface characterization and cytocompatibility evaluation of silanized magnesium alloy AZ91 for biomedical applications10.1088/1468-6996/13/6/064214 ↗
32. Thermo scientific xps, https://xpssimplified.com/elements/carbon.php (accessed 14 August 2018).
33. S. Yuan, G. Xiong, A. Roguin, S.H. Teoh, C. Choong, Intech, 2013. [link]. https://doi.org/10.5772/56420.10.5772/56420 ↗
34. Thermo scientific xps, https://xpssimplified.com/elements/nitrogen.php (accessed 14 August 2018).
35. A novel method of etching copper oxide using acetic acid10.1149/1.1409400 ↗
36. Advanced analysis of copper X-ray photoelectron spectra10.1002/sia.6239 ↗
37. Sigma-aldrich, https://www.sigmaaldrich.com (accessed 14 August 2018).
38. Chemspider search and share chemistry, http://www.chemspider.com (accessed 14 August 2018).