A simple method for fabrication of antifuse WORM memories
Source abstract
Abstract
Abstract A write-only-read-many (WORM) memory device was obtained by irradiating, with a commercial ultraviolet-ozone (UVO) lamp, the aluminium bottom electrode in an Al/AlOx-UVO/Al configuration. The formation of conductive paths due Joule heating is observed when a positive or negative bias voltage is applied to the device, occurring a permanent transition from high (OFF) to low (ON) resistance state. After OFF to ON transitions, physical deformations were observed on the top of the devices, which were analyzed using morphological studies of the top electrode. To eliminate these physical deformations, the UVO treatment on the aluminium bottom electrode was replaced by the deposition of a thin polyvinyl alcohol (PVA) film (10 nm). These Al/AlOx-native/PVA/Al WORM memories presented similar I-V behaviours and the same threshold voltages to those Al/AlOx-UVO/Al devices, but with higher ON/OFF ratios. Analysis of the I-V curves confirms that the same physical phenomena, such as the formation of filamentary paths, are occurring for both types of devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (39)
Show source-provided references
1. Polymer electronic memories: materials, devices and mechanisms10.1016/j.progpolymsci.2008.08.001 ↗
2. A polymer/semiconductor write-once read-many-times memory10.1038/nature02070 ↗
3. Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film10.1063/1.4862972 ↗
4. Write-once-read-many-times characteristics of Pt/Al2O3/ITO memory devices10.1063/1.4893660 ↗
5. A review of emerging non-volatile memory (NVM) technologies and applications10.1016/j.sse.2016.07.006 ↗
6. Observation of irreversible current path in polymer dielectric using conductive atomic force microscope10.1007/s13391-014-4241-0 ↗
7. Resistive switching in transition metal oxides10.1016/S1369-7021(08)70119-6 ↗
8. A reversible bipolar WORM device based on AlOxNy thin film with Al nano phase embedded10.1016/j.sse.2016.11.014 ↗
9. The mechanism of electroforming of metal oxide memristive switches10.1088/0957-4484/20/21/215201 ↗
10. Resistive switching of rose bengal devices: a molecular effect?10.1063/1.2364036 ↗
11. Verbakel · Appl. Phys. Lett. · 2007 · 91 · 19210310.1063/1.2806275 ↗
12. Attachable and flexible aluminum oxide resistive non-volatile memory arrays fabricated on tape as the substrate10.1088/1361-6528/aa5f0d ↗
13. Electrical characterization of organic resistive memory with interfacial oxide layers formed by O2 plasma treatment10.1063/1.3478840 ↗
14. Ozone oxidation methods for aluminum oxide formation: application to low-voltage organic transistors10.1016/j.orgel.2015.03.007 ↗
15. Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behaviour10.1016/j.sse.2011.05.028 ↗
16. Transparent organic bistable memory device with pure organic active material and Al/indium tin oxide electrode10.1063/1.2938878 ↗
17. Kuznetsova · J. Vac. Sci. Technol., A · 2001 · 19 · 197110.1116/1.1359536 ↗
18. Making a superior oxide corrosion passivation layer on aluminum using ozone10.1021/la001300x ↗
19. Growth characteristics of Al oxide formed by ozone in magnetic tunnel junctions10.1063/1.1447210 ↗
20. Insulating properties of tantalum pentoxide capacitor films obtained by annealing in dry ozone10.1063/1.369339 ↗
21. Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures10.1039/C6RA00798H ↗
22. Resistive switching of aluminum oxide for flexible memory10.1063/1.2939555 ↗
23. Effect of the thickness of insulator polymeric films on the memory behavior: the case of the polymethylmethacrylate and the polystyrene10.1155/2011/702464 ↗
24. Effect of the oxidation of aluminium bottom electrode in a functionalized-carbon nanotube based organic rewritable memory device10.1016/j.tsf.2016.10.046 ↗
25. Facile synthesis of carbon nanotubes and their use in the fabrication of resistive switching memory devices10.1039/c3ra45359f ↗
26. Flexible and transparent resistive switching devices using Au nanoparticles decorated reduced graphene oxide in polyvinyl alcohol matrix10.1016/j.cap.2015.03.008 ↗
27. Nonvolatile memory devices based on poly(vinyl alcohol) + graphene oxide hybrid composites10.1039/C6CP00007J ↗
28. WSXM: a software for scanning probe microscopy and a tool for nanotechnology10.1063/1.2432410 ↗
29. R. Ranjen, K. Pey, L. Tang, G. Groeseneken, L. Bera, S. Gendt, A comprehensive model for breakdown mechanism in HfO2 high-gate stacks, in: IEDM Conf. Proc. 2004, 2004, pp. 725–728.
30. Dramatically improved dielectric properties of polymer composites by controlling the alignment of carbon nanotubes in matrix10.1039/C3RA45769A ↗
31. Band offsets of wide-band-gap oxides and implications for future electronic devices10.1116/1.591472 ↗
32. Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor10.1063/1.4769818 ↗
33. Modifying poly(vinyl alcohol) (PVA) from insulator to small-bandgap polymer: a novel approach for organic solar cells and optoelectronic devices10.1007/s11664-015-4191-9 ↗
34. Optically readout write once read many memory with single active organic layer10.1063/1.4940204 ↗
35. Carrier transport mechanisms of organic bistable devices fabricated utilizing colloidal ZnO quantum dot-polymethylmethacrylate polymer nanocomposites10.1063/1.3454774 ↗
36. Brandrup · 1975
37. Interfacial interactions of plasma-polymerized acrylic acid and an oxidized aluminium surface investigated using XPS, FTIR and poly (acrylic acid) as a model compound10.1002/(SICI)1096-9918(199812)26:13<961::AID-SIA432>3.0.CO;2-7 ↗
38. Programmable digital memory devices based on nanoscale thin films of a thermally dimensionally stable polyimide10.1088/0957-4484/20/13/135204 ↗
39. Synthesis of alternating copolysiloxane with terthiophene and perylenediimide derivative pendants for involatile WORM memory device10.1002/adfm.201304004 ↗