Plasma combined self-assembled monolayer pretreatment on electroplated-Cu surface for low temperature Cu–Sn bonding in 3D integration
Source abstract
Abstract
Abstract A novel pretreatment of plasma combined self-assembled monolayer (PcSAM) was proposed to improve surface properties of electroplated Cu for low temperature Cu–Sn bonding in 3D integration. Measurement results revealed that self-assemble monolayer (SAM) would be easier absorbed on plasma-activated Cu surface and protect the clean surface from re-oxidation when storage. The absorbed SAM layer could be removed by thermal desorption during bonding process. With optimal PcSAM pretreatment, oxygen content of the Cu surface was reduced to as low as 1.39%. The followed Cu–Sn bonding was realized at low temperature of 200 °C. Finally, bonding interface exhibited a defect-free interconnection, and bonding strength has reached as high as 68.7 MPa.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 3D IC and TSV technologies · Electronic Packaging and Soldering Technologies · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (31)
Show source-provided references
1. Overview and outlook of through-silicon via (TSV) and 3D integrations10.1108/13565361111127304 ↗
2. Wafer-level three-dimensional integrated circuits (3D IC): Schemes and key technologies10.1016/j.mee.2011.05.036 ↗
3. Reliability of key technologies in 3D integration10.1016/j.microrel.2012.08.011 ↗
4. Low temperature bonding technology for 3D integration10.1016/j.microrel.2011.03.038 ↗
5. Reliable microjoints formed by solid-liquid interdiffusion (SLID) bonding within a chip-stacking architecture
6. High density metal–metal interconnect bonding for 3-D integration
7. High-density large-area-array interconnects formed by low-temperature Cu/Sn–Cu bonding for three-dimensional integrated circuits10.1109/TED.2012.2193404 ↗
8. Fine pitch Cu/Sn solid state diffusion bonding for advanced three-dimensional chip stacking10.7567/JJAP.54.030203 ↗
9. Low temperature solid-state-diffusion bonding for fine-pitch Cu/Sn/Cu interconnect
10. Ultra-thin Ti passivation mediated breakthrough in high quality Cu–Cu bonding at low temperature and pressure10.1016/j.matlet.2016.01.126 ↗
11. Concurrent nucleation, formation and growth of two intermetallic compounds (Cu6Sn5 and Cu3Sn) during the early stages of lead-free soldering10.1016/j.actamat.2011.10.053 ↗
12. Improvement of wafer-level Cu-to-Cu bonding quality using wet chemical pretreatment10.1166/jnn.2012.5619 ↗
13. Effect of formic acid vapor in situtreatment process on Cu low-temperature bonding
14. Effect of wet pretreatment on interfacial adhesion energy of Cu–Cu thermocompression bond for 3D IC packages10.1007/s11664-009-0942-9 ↗
15. Argon plasma treatment on Cu surface for Cu bonding in 3D integration and their characteristics10.1016/j.apsusc.2014.10.098 ↗
16. Direct bonding of CMP-Cu films by surface activated bonding (SAB) method10.1007/s10853-005-2677-1 ↗
17. Characterization of Cu surface cleaning by hydrogen plasma10.1116/1.1387084 ↗
18. Characteristics of high-purity Cu thin films deposited on polyimide by radio-frequency Ar/H2 atmospheric-pressure plasma jet10.1063/1.4795808 ↗
19. The adsorption of atomic N and the growth of copper nitrides on Cu(100)10.1016/j.susc.2009.04.039 ↗
20. Plasma pretreatment of the Cu seed layer surface in Cu electroplating10.1016/S0254-0584(01)00378-9 ↗
21. Activation of electroplated-Cu surface via plasma pretreatment for low temperature Cu–Sn bonding in 3D interconnection10.1016/j.apsusc.2016.05.023 ↗
22. Study on Ar(5% H2) plasma pretreatment for Cu/Sn/Cu solid-state-diffusion bonding in 3D interconnection
23. Electrochemical characterization of copper surface modified by n-alkanethiols in chloride-containing solutions10.1016/S0169-4332(03)00573-7 ↗
24. Molecular processes of adsorption and desorption of alkanethiol monolayers on Au(111)10.1063/1.479302 ↗
25. Fluxless soldering of copper substrates using self-assembled monolayers for preservation
26. Effect of chain length on low temperature gold–gold bonding by self-assembled monolayers10.1063/1.2906905 ↗
27. In-situ cleaning and passivation of oxidized Cu surfaces by alkanethiols and its application to wire bonding10.1007/s11664-004-0027-8 ↗
28. Cu–Cu diffusion bonding enhancement at low temperature by surface passivation using self-assembled monolayer of alkane?thiol10.1063/1.3263154 ↗
29. Low temperature Cu–Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement10.1016/j.microrel.2011.04.003 ↗
30. Enhancing Cu–Cu diffusion bonding at low temperature via application of self-assembled monolayer passivation10.1149/1.3622478 ↗
31. Phase transformation and grain orientation of Cu-Sn intermetallic compounds during low temperature bonding process