journal article·2023-08

Growth of singly orientated MoSe2 monolayer on Al2O3(11 2 ¯ 0)

Yufeng Huang, Yaxu Wei, Yanning Li, Chunguang Hu, Wanfu Shen, Kun Zhang, Zongwei Xu, Lidong Sun

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (46)

Show source-provided references
1. Two-dimensional atomic crystals10.1073/pnas.0502848102 ↗
2. Single-layer MoS2 Electronics10.1021/ar500274q ↗
3. 2D transition metal dichalcogenides10.1038/natrevmats.2017.33 ↗
4. Atomically thin MoS2: A new direct-gap semiconductor10.1103/PhysRevLett.105.136805 ↗
5. Emerging photoluminescence in monolayer MoS210.1021/nl903868w ↗
6. Vibrational and optical properties of MoS2: From monolayer to bulk10.1016/j.surfrep.2015.10.001 ↗
7. Photodetectors based on graphene, other two-dimensional materials and hybrid systems10.1038/nnano.2014.215 ↗
8. Solar-energy conversion and light emission in an atomic monolayer p-n diode10.1038/nnano.2014.14 ↗
9. Atomically thin p-n junctions based on two-dimensional materials10.1039/C7CS00880E ↗
10. Ultrasensitive photodetectors based on monolayer MoS210.1038/nnano.2013.100 ↗
11. Single-layer MoS2 transistors10.1038/nnano.2010.279 ↗
12. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides10.1103/PhysRevLett.108.196802 ↗
13. Valley polarization in MoS2 monolayers by optical pumping10.1038/nnano.2012.95 ↗
14. Control of valley polarization in monolayer MoS2 by optical helicity10.1038/nnano.2012.96 ↗
15. Epitaxial growth of two-dimensional layered transition-metal dichalcogenides: Growth mechanism, controllability, and scalability10.1021/acs.chemrev.7b00212 ↗
16. Towards controlled synthesis of 2D crystals by chemical vapor deposition (CVD)10.1016/j.mattod.2020.06.012 ↗
17. Chemical vapor deposition of 2D materials: a review of modeling, simulation, and machine learning studies10.1016/j.isci.2022.103832 ↗
18. Large-area epitaxial mono layer MoS210.1021/acsnano.5b01281 ↗
19. Shape evolution of monolayer MoS2 crystals grown by chemical vapor deposition10.1021/cm5025662 ↗
20. Chemical vapor deposition of high-quality large-sized MoS2 crystals on silicon dioxide substrates10.1002/advs.201600033 ↗
21. Epitaxial growth of centimeter-scale single-crystal MoS2 monolayer on Au(111)10.1021/acsnano.0c01478 ↗
22. Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium10.1126/science.1252268 ↗
23. Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper10.1038/s41586-019-1226-z ↗
24. Designed growth of large-size 2D single crystals
25. Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire10.1038/s41565-021-01004-0 ↗
26. Step-edge-guided nucleation and growth of aligned WSe2 on sapphire via a layer-over-layer growth mode10.1021/acsnano.5b03043 ↗
27. Substrate induced optical anisotropy in monolayer MoS210.1021/acs.jpcc.0c02715 ↗
28. Epitaxial growth of rectangle shape MoS2 with highly aligned orientation on twofold symmetry a-plane sapphire10.1002/smll.202000596 ↗
29. Reflection anisotropy spectroscopy, Reports10.1088/0034-4885/68/6/R01 ↗
30. A rotating-compensator based reflectance difference spectrometer for fast spectroscopic measurements10.1063/1.3379289 ↗
31. Continuous heteroepitaxy of two dimensional heterostructures based on layered chalcogenides10.1021/acsnano.8b07991 ↗
32. Metallic twin grain boundaries embedded in MoSe2 monolayers grown by molecular beam epitaxy10.1021/acsnano.7b02172 ↗
33. Post-synthesis modifications of two-dimensional MoSe2 or MoTe2 by incorporation of excess metal atoms into the crystal structure10.1021/acsnano.8b01580 ↗
34. Epitaxy of 2D materials toward single crystals
35. The epitaxy of 2D materials growth10.1038/s41467-020-19752-3 ↗
36. Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth10.1039/D1CS00264C ↗
37. Covalent functionalization of monolayered transition metal dichalcogenides by phase engineering10.1038/nchem.2108 ↗
38. Hole contacts on transition metal dichalcogenides: Interface chemistry and band alignments10.1021/nn501728w ↗
39. Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2
40. Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection10.1021/nn503287m ↗
41. Chemical vapor deposition growth of crystalline monolayer MoSe210.1021/nn501175k ↗
42. Real-time monitoring of 2D semiconductor film growth with optical spectroscopy10.1088/1361-6528/aa8943 ↗
43. Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx(001)10.1063/1.4773560 ↗
44. Bandgap engineering of strained monolayer and bilayer MoS210.1021/nl4014748 ↗
45. Band gap engineering with ultralarge biaxial strains in suspended monolayer MoS210.1021/acs.nanolett.6b02615 ↗
46. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide10.1038/nmat3633 ↗