HfOx bipolar resistive memory with robust endurance using ZrNx as buttom electrode
Source abstract
Abstract
Abstract The high temperature conducting materials Zirconium nitride (ZrN x ) films were deposited on silicon-based substrates as bottom electrodes for resistive random access memory (RRAM) cells in Pt (top)/HfO x ( x = 1.7) /ZrN x (bottom) sandwich structure. The reproducible resistive switching (RS) property of the memory cells was studied systematically for RRAM applications. In contrast to the memory cells in Pt/HfO x /Pt structure, the Pt/HfO x /ZrN x structure show a robust endurance, low and stable operation parameters, large memory window and good retention properties. The composition and chemical bonding states of the prepared HfO x and ZrN x thin films were analyzed by X-ray photoelectron spectroscopy (XPS) technique and the cross-sectional image of the Pt/HfO x /ZrN x structure was observed by high-resolution transmission electron microscopy (HR-TEM). The results show that the formed interface Zirconium oxynitride between the dielectric HfO x film and the ZrN x bottom electrode play key roles in the RS performance improvement.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (43)
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