Influence of laser power on the orientation and microstructure of CeO2 films deposited on Hastelloy C276 tapes by laser chemical vapor deposition

Abstract CeO 2 films were prepared on LaMnO 3 /MgO/Gd 2 Zr 2 O 7 multi-coated Hastelloy C276 tapes by laser chemical vapor deposition at different laser power ( P L ) from 46 to 101 W. Epitaxial (1 0 0) CeO 2 films were prepared at P L = 46–93 W (deposition temperature, T dep = 705–792 K). Epitaxial CeO 2 films had rectangular-shaped grains at P L = 46–77 W ( T dep = 705–754 K), while square-shaped grains were obtained at P L = 85–93 W ( T dep = 769–792 K). CeO 2 films showed a columnar microstructure. Epitaxial (1 0 0) CeO 2 films with rectangular grains exhibited full width at half maximum of ω -scan on (2 0 0) reflection and ϕ -scan on (2 2 0) reflection of 3.4–3.2° and 6.0–7.2°, respectively. The deposition rate of the epitaxial (1 0 0) CeO 2 films had a maximum of 4.6 μm h −1 at P L = 77 W ( T dep = 754 K).