journal article·2004-04

C3F8 plasma fluorination of lead free solders for fluxless soldering

Naoe Hosoda, Tadatomo Suga

Applied Surface Science· Volume 227· Issue 1-4
Publisher page

Abstract

Abstract Fluorination of Sn–3.6 wt.% Ag lead free solder was achieved using a C 3 F 8 and O plasma treatment. X-ray photoelectron spectroscopy (XPS) was used to analysis fluorinated surface before and after oxidation in air. Plasma treatment formed SnF 2 , Sn oxide, CO and CF X groups such as CF, CF 2 , CF 3 and C-CF X on the surface. The CO and CF X groups only existed on the outermost surface. The native oxide layer was 56 nm thick. Plasma treatment reduced this oxide layer to the value between 16 nm and 31 m. Fluorine diffused to a depth of 427 nm. Increasing exposure time to air reduced the SnF 2 peak in the top surface layer, in contrast, Sn oxide peak was increased. These results suggest that oxidation of the fluorinated surface took place by replacement of F with O atoms. Fluorine atoms diffused through the solder and reached a depth of 733 nm after 4 days. Wettability tests by reflow experiments in a nitrogen atmosphere showed that the affect of plasma treatment on fluxless solder bonding lasted at least 4 days in air.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Electronic Packaging and Soldering Technologies · Metal and Thin Film Mechanics · Copper Interconnects and Reliability

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (17)

Show source-provided references
1. C.W. Hwang, M. Inoue, T. Oku, K. Suganuma, Proceedings of EcoDesign’99 Japan Symposium on Joint Reliability of Interface Between Bi Bearing Sn Alloy and Electrodes, 1999, pp. 276–279.
2. M. Nakamura, H. Tanaka, F. Ueta, M. Yamashita, S. Yoshihara, T. Shirakashi, Proceedings of the 10th Symposium on Microelectronics (MES 2000), 2000, pp. 203–206.
3. R. Sasaki, T. Machida, Proceedings of the 6th Symposium on Microelectronics (MES’95), 1995, pp. 203–206.
4. Kuhmann · IEEE Photon. Technol. Lett. · 1996 · 8 · 166510.1109/68.544712 ↗
5. Chen · The Solid Films · 1996 · 283 · 24310.1016/0040-6090(95)08531-9 ↗
6. Mori · J. Jpn. Inst. Electron. Packag. · 2000 · 3 · 15310.5104/jiep.3.153 ↗
7. J.P. Rondeau, N. Hosoda, T. Suga, M. Suzuki, J. Shibata, Proceedings of the 9th International Microelectronics Conference, 1996, pp. 103–107.
8. Moses · Anal. Chem. · 1978 · 50 · 57910.1021/ac50026a010 ↗
9. Lin · Anal. Chem. · 1977 · 49 · 122810.1021/ac50016a042 ↗
10. Nyholm · J. Phys. C · 1980 · 13 · L27910.1088/0022-3719/13/11/008 ↗
11. Gengenbach · J. Polym. Sci. Part A: Polym. Chem. · 1998 · 36 · 98510.1002/(SICI)1099-0518(19980430)36:6<985::AID-POLA14>3.0.CO;2-H ↗
12. Willemen · Inorg. Chim. Acta · 1979 · 34 · 17510.1016/S0020-1693(00)94698-X ↗
13. Gengenbach · Surf. Interface Anal. · 1998 · 26 · 49810.1002/(SICI)1096-9918(199806)26:7<498::AID-SIA393>3.0.CO;2-3 ↗
14. Clark · J. Polym. Sci. Polym. Chem. Ed. · 1980 · 18 · 165110.1002/pol.1980.170180601 ↗
15. Gelius · Phys. Scr. · 1970 · 2 · 7010.1088/0031-8949/2/1-2/014 ↗
16. J.A. Dean, Langes Handbook of Chemistry, 15th ed., McGraw-Hill, New York, USA, 1999, p. 3.56.
17. R.C. Weast, Handbook of Chemistry and Physics, CRC Press, 55th ed., Cleveland, OH, USA, 1974, p. B-149.