journal article·2007-08

A mathematical model for material removal and chemical–mechanical synergy in chemical–mechanical polishing at molecular scale

J. Bai, Y.W. Zhao, Y.G. Wang

Applied Surface Science· Volume 253· Issue 20
Publisher page

Abstract

Abstract This paper presents a mathematical material removal model based on the chemical and mechanical synergistic effects in the chemical–mechanical polishing (CMP) process. It seems to explain the transition from a chemically dominant region to a mechanically dominant region. In addition, this model predicts the effects of most variables involved in the CMP process including the processing conditions (velocity, downpressure), pad properties (modulus, hardness and asperity sizes) and slurry characteristics (particle size, concentration and distribution). The results reveal some insights into the micro-contact and wear mechanisms of the CMP process.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Surface Polishing Techniques · Advanced machining processes and optimization · Force Microscopy Techniques and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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