A mathematical model for material removal and chemical–mechanical synergy in chemical–mechanical polishing at molecular scale
Source abstract
Abstract
Abstract This paper presents a mathematical material removal model based on the chemical and mechanical synergistic effects in the chemical–mechanical polishing (CMP) process. It seems to explain the transition from a chemically dominant region to a mechanically dominant region. In addition, this model predicts the effects of most variables involved in the CMP process including the processing conditions (velocity, downpressure), pad properties (modulus, hardness and asperity sizes) and slurry characteristics (particle size, concentration and distribution). The results reveal some insights into the micro-contact and wear mechanisms of the CMP process.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Advanced machining processes and optimization · Force Microscopy Techniques and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (14)
Show source-provided references
1. Martinez · Solid State Technol. · 1994 · 5 · 26
2. Li · 2000
3. Warnock · J. Elecrochem. Soc. · 1991 · 138 · 37910.1149/1.2085984 ↗
4. Runnels · J. Electrochem. Soc. · 1994 · 141 · 169810.1149/1.2054985 ↗
5. Mater. Res. Soc. · 2000 · 566 · 181
6. Preston · J. Soc. Glass Technol. · 1927 · 11 · 214
7. D.O. Ouma, Ph.D. Thesis, MIT, USA, 1999.
8. Zhao · Wear · 2002 · 252 · 22010.1016/S0043-1648(01)00871-7 ↗
9. Kogut · 2003
10. Luo · IEE. Trans. Semicond. Manufact. · 2003 · 16 · 46910.1109/TSM.2003.815199 ↗
11. Qin · Thin Solid Films. · 2004 · 446 · 27710.1016/j.tsf.2003.09.060 ↗
12. Y.G. Wang, Y.W. Zhao, J.G, J. Mater. Process. Technol. 183 (2007) 374.10.1016/j.jmatprotec.2006.10.030 ↗
13. Zhao · Wear · 2003 · 254 · 33210.1016/S0043-1648(03)00015-2 ↗
14. Luo · IEE. Trans. Semicond. Manufact. · 2003 · 16 · 4510.1109/TSM.2002.807739 ↗