Characterization of HfO N thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
Source abstract
Abstract
Abstract The structural and electrical characteristics of in-situ nitrogen-incorporated plasma enhanced atomic layer deposition (PE-ALD) HfO x N y thin films using NH 3 and N 2 plasmas as reactants were comparatively studied. The HfO x N y test structures prepared using NH 3 and N 2 plasmas were analyzed by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high resolution transmission electron microscopy (HR-TEM) to investigate the chemical composition, crystallinity, and cross-sectional layers including the interfacial layer, respectively. By utilizing NH 3 and N 2 plasmas, the nitrogen-incorporated HfO x N y thin films fabricated by in-situ PE-ALD showed a high dielectric constant and thermal stability, which suppresses the interfacial layer and increases the crystallization temperature. The high leakage current densities of the HfO x N y thin film test structures fabricated using NH 3 and N 2 plasmas caused by lowering the energy bandgap and band offset are related to the Hf N bond ratio and dielectric constant.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
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