Hydrogen passivation of silicon nanowire structures
Source abstract
Abstract
Abstract In this work, we focus on hydrogen passivation of silicon nanowire structures (SiNWs) obtained by metal assisted chemical etching (MACE) intended to be used in silicon-based solar cells. SiNWs present high surface defects density causing the minority carrier lifetime reduction. Our results show that hydrogen passivation of SiNWs ameliorates minority carrier lifetime by reducing the dangling bonds and then the surface recombination velocity. This enhancement is limited by SiNWs distribution.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (17)
Show source-provided references
1. Silicon nanowire solar cells10.1063/1.2821113 ↗
2. Investigation of the effectiveness of SiNWs used as an antireflective layer in solar cells10.1016/j.solener.2014.10.007 ↗
3. Silicon nanowire arrays based “black silicon” solar cells
4. Dramatic reduction of surface recombination by in situ surface passivation of silicon nanowires10.1021/nl201179n ↗
5. Silicon nanowire band gap modification10.1021/nl061888d ↗
6. Modulation of the work function of silicon nanowire by chemical surface passivation: a DFT study10.1007/s00214-010-0779-6 ↗
7. Surface passivation effects in silicon nanowires
8. Dendrite-assisted growth of silicon nanowires in electroless metal deposition10.1002/adfm.200390018 ↗
9. Metal-particle-induced, highly localized site-specific etching of Si and formation of single-crystalline Si nanowires in aqueous fluoride solution10.1002/chem.200600032 ↗
10. Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires10.1088/0957-4484/22/15/155606 ↗
11. Ordered silicon nanowire arrays via nanosphere lithography and metal-induced etching10.1063/1.2724897 ↗
12. Silver nanoparticles effect on silicon nanowires properties
13. Mechanism of nanowires formation in metal assisted chemical etching10.1016/j.electacta.2012.12.075 ↗
14. Quasi-steady-state photoconductance, a new method for solar cell material and device characterization
15. Analysis of the interaction of a laser pulse with a silicon wafer: determination of bulk lifetime and surface recombination velocity10.1063/1.337938 ↗
16. Statistics of the recombinations of holes and electrons10.1103/PhysRev.87.835 ↗
17. Unusually low surface-recombination velocity on silicon and germanium surfaces10.1103/PhysRevLett.57.249 ↗