Preparation of low ferromagnetic resonance linewidth yttrium iron garnet films on silicon substrate

Abstract Yttrium iron garnet films were prepared on silicon substrate by pulsed laser deposition. Compositional buffer layers composed by CeO2/YSZ (YSZ: yttria-stabilized ZrO2) and multi-low temperature buffer layers (Y3Al5O12, Y3Al2.5Fe2.5O12, Y3Fe5O12) (shortened form as CeO2/YSZ and multi-LT buffer layer) were employed to achieve low ferromagnetic resonance width. The effects of buffer layers on the microstructures, crystallinity and low ferromagnetic resonance linewidth of films were studied. A FMR linewidth of 53 Oe were obtained, which was ascribed to its well crystallinity, high dense and uniform grain size.