Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond
Source abstract
Abstract
Abstract Fabrication of dual-termination Schottky barrier diode (SBDDT) by using oxygen-/fluorine-terminated diamond (OT-/FT-diamond) has been carried out on P-/P+ diamond. X-ray photoelectron spectroscopy (XPS) measurement was used to determine the chemical composition of OT-/FT-diamond surface treated by ultraviolet ozone and C4F8 plasma, respectively. The barrier heights of Au on OT-/FT-diamond were calculated to be 2.0 ± 0.12 and 2.39 ± 0.12 eV, respectively. Au film was patterned on the OT-/FT-diamond as the schottky electrode, and Ti/Au film were deposited on the backside of substrate as ohmic electrode, then a SBDDT was achieved completely. SBDDT exhibits better forward and reverse I-V characteristics based on the optimum OT-/FT-diamond (WO/WF) area ratio 0.2, which illustrates that the combination of dual surface termination is an efficient way to optimize the performance of diamond SBD.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Semiconductor materials and devices · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (31)
Show source-provided references
1. High carrier mobility in single-crystal plasma-deposited diamond10.1126/science.1074374 ↗
2. Electron mobility in phosphorous doped 111 homoepitaxial diamond10.1063/1.2969066 ↗
3. High carrier mobility on hydrogen terminated (100) diamond surfaces10.1063/1.2168497 ↗
4. Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond10.1103/PhysRevB.81.045303 ↗
5. Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces10.1103/PhysRevB.64.165411 ↗
6. Work function and electron affinity of the fluorine-terminated (100) diamond surface10.1063/1.4793999 ↗
7. Analysis of diamond pseudo-vertical Schottky barrier diode through patterning tungsten growth method10.1063/1.5020317 ↗
8. Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality10.1016/j.apsusc.2016.04.166 ↗
9. C. Hu, Z.C. Liu, J.W. Zhang, W. Wang, H.X. Wang, Diamond Schottky barrier diode with fluorine- and oxygen-termination, doi: http://doi.org/10.1557/adv.2016.135.10.1557/adv.2016.135 ↗
10. Fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structures10.1016/j.tsf.2009.04.031 ↗
11. Barrier height adjustment of Schottky barrier diodes using a double-metal structure10.1016/j.tsf.2011.06.103 ↗
12. A dual-metal-trench Schottky pinch-rectifier in 4H-SiC10.1109/55.663526 ↗
13. X-ray photoelectron spectroscopy study of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond10.1016/j.diamond.2015.12.007 ↗
14. Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure10.1063/1.4810866 ↗
15. Comparison of the chemical composition of boron-doped diamond surfaces upon different oxidation processes10.1016/j.electacta.2009.05.037 ↗
16. On the changing electrochemical behaviour of boron-doped diamond surfaces with time after cathodic pre-treatments10.1016/j.electacta.2005.12.039 ↗
17. Electrochemical hydrogen termination of boron-doped diamond10.1063/1.3476346 ↗
18. Distinction between surface hydroxyl and ether groups on boron-doped diamond electrodes using a chemical approach10.1016/j.elecom.2009.12.029 ↗
19. Surface structure and surface barrier characteristics of boron-doped diamond in electrolytes after CF4 plasma treatment in RF-barrel reactor10.1016/j.diamond.2009.12.016 ↗
20. Electronic surface barrier properties of fluorine-terminated boron-doped diamond in electrolytes10.1016/j.susc.2011.01.001 ↗
21. The properties of fluorine-containing diamond-like carbon films prepared by pulsed DC plasma-activated chemical vapour deposition10.1016/j.diamond.2010.10.001 ↗
22. F- and Cl-terminations of (100) oriented single crystalline diamond10.1002/pssa.201431188 ↗
23. Physicochemical properties of fluorinated diamond electrodes10.1021/jp0274280 ↗
24. X-ray photoelectron spectroscopy study of synchrotron radiation irradiation of a polytetrafluoroethylene surface10.1143/JJAP.42.1722 ↗
25. Electron spectro-microscopic determination of barrier height and spatial distribution of Au and Ag Schottky junctions on boron-doped diamond (001)10.7567/JJAP.53.05FP03 ↗
26. Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001)10.1016/j.diamond.2015.10.028 ↗
27. Band diagram for chemical vapor deposition diamond surface conductive layer: Presence of downward band bending due to shallow acceptors10.1016/j.susc.2010.03.031 ↗
28. Electrochemical route for fluorinated modification of boron-doped diamond surface with perfluorooctanoic acid10.1016/j.elecom.2007.10.003 ↗
29. The effects of surface oxidation and fluorination of boron-doped diamond anodes on perchlorate formation and organic compound oxidation10.1016/j.electacta.2015.06.034 ↗
30. High-temperature stability of Au/p-type diamond Schottky diode10.1002/pssr.200903151 ↗
31. Metal oxide semiconductor structure using oxygen-terminated diamond10.1063/1.4811668 ↗