journal article·2018-10

Highly selective PbS thin film based ammonia sensor for inert ambient: In-situ Hall and photoelectron studies

T.V. Beatriceveena, E. Prabhu, A. Sree Rama Murthy, V. Jayaraman, K.I. Gnanasekar

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Abstract

Abstract Granular thin films of p-type semiconducting PbS (Cubic) with predominantly a-axis oriented grains having an average grain size of about 300 nm were deposited on polycrystalline alumina by pulsed laser deposition technique. Optical measurements show a band gap of 2.25 eV. The thin films were highly selective to ammonia at 473 K even in the presence of hydrogen and they operate in inert ambient with a typical response and recovery times of about 25 s and 120 s respectively. In-situ Hall measurements show an exponential decrease in hole carrier concentration with increasing NH3 level. XPS analysis of Pb 4f and S 2p levels reveals that the valence state of Pb and Sulphur remain in +2 and −2 respectively after exposure to the reducing ammonia and the appearance of N 1s peak at 398.1 eV confirms dissociative chemisorption of ammonia on PbS surface.
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Research context

OpenAlex topics: Gas Sensing Nanomaterials and Sensors · ZnO doping and properties · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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