Strain distribution in Mg x Zn 1-x O layers with various content of Mg grown on a -plane sapphire by plasma-assisted molecular beam epitaxy
Source abstract
Abstract
Abstract Dependence of strain distribution on Mg concentration in MgxZn1-xO layers on a-plane sapphire substrate grown by plasma-assisted molecular beam epitaxy was examined. Accurate determination of lattice parameters was performed using high resolution X-ray diffraction technique. Concentration of Mg was established by Rutherford backscattering spectrometry. These results show the non-linear relationship between the lattice parameters and Mg concentration. We observe the gradual gain of strain with the increase of Mg content in MgxZn1-xO layers, in particular in c-direction. Besides epitaxial layers on a-plane sapphire are biaxially strained similar to layers on c-plane sapphire.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Semiconductor materials and devices
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