Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
Source abstract
Abstract
Abstract AlN thin films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate the resistive switching (RS) behavior. The bipolar RS properties were observed in the Cu/PEALD-AlN/Pt devices, which are induced upon the formation/disruption of Cu conducting filaments, as confirmed by the temperature dependent resistances relationships at different resistance states. The resistance ratio of the high and low resistance states (HRS/LRS) is 102–105. The dominant conduction mechanisms at HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. This study demonstrated that the PEALD-AlN films have a great potential for the applications in high-density resistance random access memory.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
Show source-provided references
1. Nanoionics-based resistive switching memories10.1038/nmat2023 ↗
2. Memristive switching mechanism for metal/oxide/metal nanodevices10.1038/nnano.2008.160 ↗
3. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook10.1088/0957-4484/22/25/254002 ↗
4. Bipolar resistive switching performance of the nonvolatile memory cells based on solid electrolyte films10.1063/1.3211293 ↗
5. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions10.1038/nmat3649 ↗
6. Role of oxadiazole moiety in different D-A polyazothines and related resistive switching properties10.1039/c3tc30826j ↗
7. HfOx bipolar resistive memory with robust endurance using ZrNx as buttom electrode10.1016/j.apsusc.2013.07.148 ↗
8. Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition10.1063/1.4774400 ↗
9. Complementary resistive switching mechanism in Ti-based triple TiOx/TiN/TiOx and TiOx/TiOxNy/TiOx matrix10.1016/j.apsusc.2013.02.100 ↗
10. Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition10.1016/j.apsusc.2013.05.141 ↗
11. Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device10.1063/1.3483158 ↗
12. Cu-Embedded AlN-Based Nonpolar Nonvolatile Resistive Switching Memory10.1109/LED.2012.2220953 ↗
13. Effect of Electrode Materials on AlN-Based Bipolar and Complementary Resistive Switching10.1021/am303128h ↗
14. Piezoelectric aluminum nitride nanoelectromechanical actuators10.1063/1.3194148 ↗
15. Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges10.1116/1.3609974 ↗
16. Tuning resistive switching on single-pulse doped multilayer memristors10.1088/0957-4484/24/3/035702 ↗
17. Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures10.1002/pssa.201127430 ↗
18. XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy10.1002/sia.2874 ↗
19. High-Performance Programmable Memory Devices Based on Co-Doped BaTiO310.1002/adma.201004306 ↗
20. Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure10.1063/1.3672811 ↗
21. Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices10.1021/jp305482c ↗
22. Coexistence of Bipolar and Unipolar Switching of Cu and Oxygen Vacancy Nanofilaments in Cu/TaOx/Pt Resistive Devices10.1149/2.012201ssl ↗
23. Key concepts behind forming-free resistive switching incorporated with rectifying transport properties10.1038/srep02208 ↗
24. The mechanism of electroforming of metal oxide memristive switches10.1088/0957-4484/20/21/215201 ↗
25. High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device10.1149/2.092203jes ↗