journal article·2012-08

Effect of temperature on the deposition of ZnO thin films by successive ionic layer adsorption and reaction

Shih-Chang Shei, Pay-Yu Lee, Shoou-Jinn Chang

Applied Surface Science· Volume 258· Issue 20
Publisher page

Abstract

Abstract In this study, ZnO thin films were deposited on glass substrates by the successive ionic layer adsorption and reaction (SILAR) method, and the effect of the temperature treatment in ethylene glycol on the crystal structure, surface morphology, and optical properties of the films were investigated. When the temperature was below 85 °C, the ZnO films showed poor optical transmission and had a rough surface crystal structure. As the temperature was increased, dense polycrystalline films with uniform ZnO grain distribution were obtained. The optical transmittance of the ZnO thin films fabricated at temperatures greater than 95 °C was very high (90%) in the visible-light region. Therefore, it could be concluded that increasing the temperature of treatment in ethylene glycol helps in obtaining fine-grained ZnO films with a high growth rate and a low concentration of oxygen vacancies. However, temperatures greater than 145 °C led to shedding of ZnO from the surface and a reduction in the growth rate. Thus, temperature treatment was confirmed to play an important role in ZnO film deposition instead of post thermal annealing after the film growth.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (36)

Show source-provided references
1. Gao · Journal of Wuhan University of Technology—Materials Science Edition · 2005 · 20 · 2310.1007/BF02838490 ↗
2. Vargas-Hernandez · Microelectronics Journal · 2008 · 39 · 134910.1016/j.mejo.2008.01.056 ↗
3. Lupan · Thin Solid Films · 2008 · 516 · 333810.1016/j.tsf.2007.10.104 ↗
4. Lupan · Superlattices and Microstructures · 2007 · 42 · 37510.1016/j.spmi.2007.04.009 ↗
5. Lupan · Materials Research Bulletin · 2009 · 44 · 6310.1016/j.materresbull.2008.04.006 ↗
6. Mondal · Journal of Physical Science · 2008 · 12 · 221
7. Shishiyanu · Sensors and Actuators · 2005 · B107 · 37910.1016/j.snb.2004.10.030 ↗
8. Suresh Kumar · Journal of Colloid and Interface Science · 2011 · 363 · 5110.1016/j.jcis.2011.07.015 ↗
9. Gao · Applied Surface Science · 2004 · 229 · 27510.1016/j.apsusc.2004.02.004 ↗
10. Jimenez-Gonzailez · Semiconductor Science and Technology · 1995 · 10 · 127710.1088/0268-1242/10/9/013 ↗
11. Li · Journal of Crystal Growth · 2005 · 275 · e94310.1016/j.jcrysgro.2004.11.098 ↗
12. Habibia · Journal of the Iranian Chemical Society · 2008 · 5 · 60310.1007/BF03246140 ↗
13. Jain · Materials Science (Poland) · 2007 · 25 · 233
14. Miyazaki · Japanese Journal of Applied Physics · 2006 · 45 · 261810.1143/JJAP.45.2618 ↗
15. Drici · Physical Status Solidi A · 2004 · 201 · 152810.1002/pssa.200306806 ↗
16. Yamada · Thin Solid Films · 2005 · 480–481 · 50310.1016/j.tsf.2004.11.051 ↗
17. Sun · Thin Solid Films · 2008 · 516 · 557110.1016/j.tsf.2007.07.030 ↗
18. Shei · Journal of the Electrochemical Society · 2011 · 158 · H20810.1149/1.3528306 ↗
19. Barka · Journal of Photochemistry and Photobiology A: Chemistry · 2008 · 195 · 34610.1016/j.jphotochem.2007.10.022 ↗
20. Diez · Separation and Purification Technology · 1998 · 13 · 2510.1016/S1383-5866(97)00053-1 ↗
21. Akkas · Radiation Physics and Chemistry · 1999 · 55 · 71710.1016/S0969-806X(99)00218-2 ↗
22. Crupi · Molecular Physics · 2000 · 98 · 158910.1080/00268970009483364 ↗
23. Burstein · Physical Review · 1954 · 93 · 63210.1103/PhysRev.93.632 ↗
24. Moss · Proceedings of the Physical Society. Section B · 1954 · 67 · 77510.1088/0370-1301/67/10/306 ↗
25. Hou · Crystal Research and Technology · 2007 · 42 · 106810.1002/crat.200710947 ↗
26. Lee · Journal of Luminescence · 2009 · 129 · 14810.1016/j.jlumin.2008.09.003 ↗
27. Yang · Chemical Physics Letters · 2005 · 409 · 33710.1016/j.cplett.2005.05.015 ↗
28. Zhao · Physica B · 2006 · 373 · 15410.1016/j.physb.2005.11.116 ↗
29. Wang · Journal of Crystal Growth · 2004 · 263 · 26910.1016/j.jcrysgro.2003.11.059 ↗
30. Zhou · Applied Physics Letters · 2002 · 80 · 21010.1063/1.1432763 ↗
31. Noei · Physical Chemistry Chemical Physics · 2008 · 10 · 709210.1039/b811029h ↗
32. Takamori · Japanese Journal of Applied Physics · 2007 · 46 · 294410.1143/JJAP.46.2944 ↗
33. Khallaf · Journal of Physics D: Applied Physics · 2009 · 42 · 135304110.1088/0022-3727/42/13/135304 ↗
34. Jing · Materials Science and Engineering A · 2002 · 332 · 35610.1016/S0921-5093(01)01801-9 ↗
35. Hofman · Surface and Interface Analysis · 1996 · 24 · 110.1002/(SICI)1096-9918(199601)24:1<1::AID-SIA73>3.0.CO;2-I ↗
36. Awazu · Journal of Non-Crystalline Solids · 2000 · 272 · 15410.1016/S0022-3093(00)00118-6 ↗