Binding of hydrogen to phosphorus dopant in phosphorus-doped diamond surfaces: A density functional theory study

Abstract Although phosphorus is an n-type donor in diamond, H impurities can bind to and passivate P. Here, H binding to a P dopant in both diamond (0 0 1) and (1 1 1) surfaces is investigated by density functional theory. The energy calculations reveal the most stable P–H complex structures for each P-doped position. P–H binding energies are the lowest for the second P doped C layer among those for four investigated P-doped C layers. H migration from on-surface to P in the second C layer is exothermic, with an energy barrier of zero, whereas that from on-surface to P below the second C layer is endothermic, with an energy barrier greater than 0.95–7.09 eV. Thus, both of binding energy and migration calculations imply that P–H complex is more likely to form when P is doped in the second C layer than when P is doped below the second C layer. Moreover, H migration energy barrier from on-surface to P below the second C layer in the (1 1 1) surface is at least 0.85 eV greater than that in the (0 0 1) surface, which indicates that P–H complex is less likely to form in (1 1 1) surface than in (0 0 1) surface.