Ge deposition on Si(1 0 0) in the conditions close to dynamic equilibrium between islands growth and their decay
Source abstract
Abstract
Abstract The formation of islands arrays during Ge deposition on Si(1 0 0) at high temperatures is studied using scanning tunneling and electron microscopies. It is found that the island size and shape distributions, which are known to be bimodal at growth temperatures below 700 °C, become monomodal at temperatures above 800 °C. The obtained data suggest that the processes such as island nucleation and Ostwald ripening become less significant in the surface morphology formation, giving the advantage to selective attachment of deposited Ge atoms to island sidewalls and spatially inhomogeneous Si-Ge intermixing, as the temperature increases. At 900 °C, the islands exhibit a tendency to form laterally ordered arrays when the growth conditions approach the dynamic equilibrium between the growth of islands and their decay by means of Si-Ge intermixing. The islands ordering is accompanied by their shape transformation into the cone with shallow sidewalls inclined from (1 0 0) by angles of around 10°.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and interfaces · Surface and Thin Film Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (44)
Show source-provided references
1. Structural properties of self-organized semiconductor nanostructures, Reviews of modern physics
2. Extremely dense arrays of germanium and silicon nanostructures
3. Hybrid superconductor⿿semiconductor devices made from self-assembled SiGe nanocrystals on silicon
4. Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
5. Room-temperature electroluminescence from Si microdisks with Ge quantum dots
6. Color generation via subwavelength plasmonic nanostructures
7. Broadband optical absorption by tunable Mie resonances in silicon nanocone arrays
8. Nanometer-scale germanium islands on Si(111) surface windows formed in an ultrathin silicon dioxide film
9. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition
10. Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation
11. SiGe quantum dot crystals with periods down to 35nm
12. Strain-induced Ge segregation on Si at high temperatures
13. Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes
14. Transition states between pyramids and domes during Ge/Si island growth
15. Extended shape evolution of low mismatch Si1-xGex alloy islands on Si(100)
16. Surface morphology of Ge layers epitaxially grown on bare and oxidized Si(001) and Si(111) substrates
17. Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source
18. Strain relaxation and ordering in SiGe layers grown on (100),(111), and (110) Si surfaces by molecular-beam epitaxy
19. Vertical ordering of islands in Ge-Si multilayers
20. Self-organization in growth of quantum dot superlattices
21. Strain-induced island scaling during Si1-xGex heteroepitaxy
22. Strain relaxation by alloying effects in Ge islands grown on Si(001)
23. Strain relief via trench formation in Ge/Si (100) islands
24. SiGe intermixing in Ge/Si(100) islands
25. Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy
26. Ultra-steep side facets in multi-faceted SiGe/Si (001) Stranski-Krastanow islands
27. Evolution and coarsening of Si-rich SiGe islands epitaxially grown at high temperatures on Si(001)
28. Strain distribution due to surface domains: a self-consistent approach with respect to surface elasticity
29. Deposition of three-dimensional Ge islands on Si (001) by chemical vapor deposition at atmospheric and reduced pressures
30. Ge⿿Si intermixing in Ge quantum dots on Si
31. LEED studies of vicinal surfaces of germanium
32. LEED studies of vicinal surfaces of silicon
33. Nanometer-scale mapping of the strain and Ge content of Ge/Si quantum dots using enhanced Raman scattering by the tip of an atomic force microscope
34. Properties of three-dimensional structures prepared by Ge dewetting from Si (111) at high temperatures
35. Influence of edge energy on modeling the growth kinetics of quantum dots
36. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
37. Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si1-xGex buffer layers
38. Origin and removal of stacking faults in Ge islands nucleated on Si within nanoscale openings in SiO2
39. Fabrication of germanium and silicon nanostructures using a scanning tunneling microscope
40. Lateral arrangement of self-assembled quantum dots in an SiGe/Si superlattice
41. Formation of island chains in SiGe/Si heteroepitaxy by elastic anisotropy
42. Nonlinear dynamics of island coarsening and stabilization during strained film heteroepitaxy
43. Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth
44. Branching of Critical Conditions for Si (111)-(7ÿ7) Oxidation