Orthogonal optimization for room temperature magnetron sputtering of ZnO:Al films for all-solid electrochromic devices

Abstract In order to obtain competent and quality (high transparency, conductivity and stability) aluminium-doped zinc oxide (ZnO:Al, ZAO) films for all solid electrochromic devices, ZAO films were prepared by direct current (D.C.) reactive magnetron sputtering at room temperature based on orthogonal design. Optical and electrical property dependences of the films on the four dominant sputtering parameters: sputtering time, target–substrate distance, sputtering power and O2 flow ratio were simultaneously investigated with measured results using mathematical and statistical method. Optimal Parameters to fabricate ZAO films with optimum comprehensive performances were obtained ultimately. Resistivity and carrier concentration of ZAO film deposited with optimized parameters were 3.89 × 10−4 Ω cm and 1.09 × 1021 cm−3, respectively. ZAO films with these superior properties were employed as transparent electrodes eventually in a WO3 based all-solid electrochromic device which displayed good electrochromic performance. The regulation range for transmittance in the visible region of the device was more than 50%, which was comparable to that of the device adopting indium tin oxide (ITO) films as electrodes.