Drastic reduction of RRAM reset current via plasma oxidization of TaOx film
Source abstract
Abstract
Abstract Reducing reset current is crucial for practical applications in RRAM. To lower reset current, the further oxidization of the as-deposited TaO x films was carried out with the treatment of oxygen plasma, and then Pt/TaO x /Pt devices with a diameter of 200 μm were fabricated using magnetron sputtering. The reset current of the devices was reduced, from more than 10 mA to 40 μA, by more than two orders of magnitude. The device stability was also improved by the plasma oxidation process. The formation of a large quantity of Ta 2 O 5 after the plasma oxidation was confirmed by X-ray photoelectron spectroscopy. The results implied that most of Ta 2 O 5 layer in the region near the top electrode was formed after the plasma oxidation and played an important role in resistive switching of the devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
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