Optical characterization of polysilazane based silica thin films on silicon substrates
Source abstract
Abstract
Abstract In this work polysilazane based silica thin films grown on multilayer structures of different ultra-thin barriers (UTBs) on silicon substrates were studied. The silica thin films were obtained by polysilazane spin coating deposition (also called SOD, spin-on dielectrics) upon different UTB liners (silicon nitride or silicon dioxide). By curing the SOD with thermal treatments the polysilazane is converted into silica thin films. The degree of conversion to SiO 2 was analyzed and the oxide local structure was studied in terms of Si O Si bridges by FTIR spectroscopy. Steady state and time resolved luminescence were applied to further characterize the oxide structure, the substrate–silica interfaces and the presence of defects. The analysis revealed the presence of dioxasilirane, Si(O 2 ), and silylene, Si:, defect centers in the samples grown on silicon nitride UTB, while these defects are not observed in samples grown on silicon oxide UTB.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicone and Siloxane Chemistry · Mesoporous Materials and Catalysis · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
Show source-provided references
1. Innovative gap-fill strategy For 28nm shallow trench isolation10.1149/1.3700888 ↗
2. Enhancement of CMOSFETs performance by utilizing SACVD-based shallow trench isolation for the 40-nm node and beyond10.1109/TNANO.2010.2046744 ↗
3. Ultralow-k nanoporous organosilicate dielectric films imprinted with dendritic spheres10.1038/nmat1291 ↗
4. Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD10.1016/j.apsusc.2011.01.020 ↗
5. Optimization of hydrogen silsesquioxane for photonic applications10.1116/1.2787832 ↗
6. The effects of C on the low-temperature formation and the properties of the spin-on dielectric films used for sub-50nm technology and beyond10.1016/j.tsf.2011.12.047 ↗
7. Deposition temperature determination of HDPCVD silicon dioxide films10.1016/j.mee.2005.07.079 ↗
8. Porosity depth profiling of spin-coated silica thin films produced by different precursors sols10.1016/j.apsusc.2008.05.212 ↗
9. Hemmilä · Applied Surface Science · 2012 · 258 · 986410.1016/j.apsusc.2012.06.044 ↗
10. Void-free filling of spin-on dielectric in 22nm wide ultrahigh aspect ratio Si trenches10.1116/1.3244626 ↗
11. Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling10.1016/j.mee.2009.08.009 ↗
12. Influence of the substrate and nitrogen amount on the microstructural and optical properties of thin r.f.-sputtered ZnO films treated by rapid thermal annealing10.1016/j.apsusc.2012.08.104 ↗
13. Chemical modification of silica-gel with hydroxyl- or amino-terminated polyamine for adsorption of Au(III)10.1016/j.apsusc.2008.09.055 ↗
14. FT IR spectroscopy of silicon oxide layers prepared with perchloric acid
15. Vibrational spectroscopy characterization of magnetron sputtered silicon oxide and silicon oxynitride films10.1016/j.apsusc.2009.07.101 ↗
16. Deconvolution of the infrared absorption peak of the vibrational stretching mode of silicon dioxide: evidence for structural order?10.1063/1.98408 ↗
17. Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition10.1116/1.573833 ↗
18. Correlation between infrared transmission spectra and the interface trap density of SiO2 films10.1016/j.microrel.2007.01.072 ↗
19. Influence of the growth temperature on the atomic distribution of TEOS deposited SiO2 films10.1116/1.2038047 ↗
20. Formation of a nanocomposite from plasma enhanced chemical vapour deposition multilayer structures10.1016/j.jcrysgro.2008.05.019 ↗
21. Quantitative analysis of the effect of disorder-induced mode coupling on infrared absorption in silica10.1103/PhysRevB.38.1255 ↗
22. Phonons in AX2 glasses: from molecular to band-like modes10.1103/PhysRevB.15.4030 ↗
23. Arrangement of Si and O atoms in thermally grown SiO2 films10.1149/1.1562601 ↗
24. Photoluminescence characterization of aged and regenerated mesoporous silica10.1016/j.jnoncrysol.2010.11.107 ↗
25. Thermal quenching properties of ultraviolet emitting centers in mesoporous silica10.1103/PhysRevB.76.125431 ↗
26. Structure and formation mechanism of blue-light-emitting centers in silicon and silica-based nanostructured materials10.1103/PhysRevB.73.233203 ↗
27. Effect of cross-linking and organic groups on the visible photoluminescence characteristics of n-octadecylsiloxanes10.1021/jp1011268 ↗
28. Structural origin of visible luminescence from silica based organic–inorganic hybrid materials10.1021/jp900911v ↗
29. Time resolved ultraviolet photoluminescence of mesoporous silica10.1021/jp0471397 ↗
30. Bright visible luminescence in silica nanoparticles10.1021/jp204350u ↗
31. Characterization of silicon nitride surface in water and acid environment: a general approach to the colloidal suspensions10.1006/jcis.1996.0320 ↗
32. Modeling H+-sensitive FETs with SPICE10.1109/16.127470 ↗
33. Low temperature investigation of the blue emission in mesoporous silica10.1016/j.msec.2005.07.009 ↗