Possibilities of C 1s XPS and N(E) C KVV Auger spectroscopy for identification of inherent peculiarities of diamond growth

Abstract The interaction of C-atoms and CH n -radicals with uncleaned and argon cleaned silicon substrate and with diamond surface after H-treatment have been studied in situ by XPS and Auger spectroscopy. It was found the formation of a new chemical surface state of carbon atoms in the case of carbon atoms and radicals interaction with cleaned silicon. The same chemical state was revealed on the H-treated diamond surface. Graphite-like structure of carbon atoms was observed on the surface of unlearned silicon and H-treated diamond after interaction with carbon atoms and radicals. N ( E ) C KVV Auger spectrum for the new chemical state of carbon atoms significantly differs from typical spectra for sp 2 - and sp 3 -bonded carbon materials. The high energy part of this spectrum was interpreted under the hypothesis of sp 3 -bonded carbon atoms but with shifted fermi level position.