Structural and plasmonic properties of Ti Zr1−N ternary nitride thin films
Source abstract
Abstract
Abstract Nitride is a kind of alternative promising plasmonic material, and ternary nitride can provide the high diversity and tunability of the plasmonic performance. In this work, TixZr1−xNy ternary nitride films were prepared by magnetron co-sputtering method, and the effects of metal content and nitrogen content on the structural and plasmonic properties of the films were investigated. The results show that the films are fcc-structured and (1 1 1)-orientated. The alloying of the ZrN and TiN can enlarger the grain size of the films, while the over-stoichiometric nitrogen atoms can depress the crystallinity. The crossover frequency ω c and energy loss of the TixZr1−xNy ternary nitride films are lower than those of the binary TiNy and ZrNy. Increasing N-content can also reduce the energy loss of films. For the films with moderate N-content, the plasma factors QSPP and the QLSPR of ternary nitride films is comparable to that of TiN films. An increase in nitrogen content reduces the QLSPR and QSPP factors. The absorption edge and optical band-gap can be narrowed by the increasing of Ti or N-content. These results demonstrate that TixZr1−xNy ternary nitride film can be used as an alternative plasma material and their plasmonic properties can be modulated over a wide range by composition.
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Research context
OpenAlex topics: Metal and Thin Film Mechanics · GaN-based semiconductor devices and materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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