Ga-doped ZnO thin film surface characterization by wavelet and fractal analysis
Source abstract
Abstract
Abstract The change in roughness of various thicknesses Ga-doped ZnO (GZO) thin films deposited by magnetron reactive sputtering on glass substrates at room temperature was measured by atomic force microscopy (AFM). Multi-resolution signal decomposition based on wavelet transform and fractal geometry was applied to process surface profiles, to evaluate the roughness trend of relevant frequency resolution. The results give a six-level decomposition and the results change with deposited time and surface morphology. Also, it is found that fractal dimension is closely connected to the underside diameter (grain size) and the distance between adjacent grains that affect the change rate of surface and the increase of the defects such as abrupt changes lead to a larger value of fractal dimension.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Surface Roughness and Optical Measurements · ZnO doping and properties · Advanced Sensor Technologies Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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