Structure, electrical and optical properties of TiNx films by atmospheric pressure chemical vapor deposition

Abstract Titanium nitride (TiN x ) films with various nitride compositions ( x ) were prepared on glass substrates by atmospheric pressure chemical vapor deposition using TiCl 4 and NH 3 as precursors. The structural, compositional, electrical and optical properties of the films were studied and the results were discussed with respect to nitride composition. The results showed a linear relationship between the lattice constant and the nitride composition. Resistivity of the films was minimized near x = 1. All the TiN x films exhibited a transmission band with a peak value of about 15% in the visible region (400–700 nm). As the wavelength increased to transition point ( λ T-R ), the reflectance of the obtained films presented a sharp increase and then reached a high value of about 50% near 2000 nm. Moreover, the red-shift of transmission band and the transition wavelength ( λ T-R ) with increasing the nitride composition were also discussed.