Electron emission from GaAs(Cs,O): Transition from negative to positive effective affinity
Source abstract
Abstract
Abstract The evolution of the escape probability of hot and thermalized photoelectrons to vacuum from GaAs(001) with adsorbed layers of cesium and oxygen under the transition from the negative to positive effective electron affinity is studied by photoemission quantum yield spectroscopy. A minimum in the dependence of the escape probability of thermalized electrons at zero affinity is observed. The minimum is caused by a photoelectron capture into the two-dimensional subband states in the near-surface band bending region. Lower escape probability values for the cesium deposition, as compared to the oxygen deposition on the GaAs(Cs,O) surface with negative electron affinity, are explained by the photoelectron reflection or scattering at two-dimensional “metallic” Cs clusters.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Photocathodes and Microchannel Plates · Electron and X-Ray Spectroscopy Techniques · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (45)
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