Polycrystalline silicon thin films by aluminum induced crystallization of amorphous silicon

Abstract Polycrystalline silicon (Poly-Si) thin films were successfully fabricated on soda-lime glass substrate by aluminum induced crystallization (AIC) process. In order to analyze non-uniform film by AIC, a new method to evaluate the poly-Si thin film average crystalline volume fraction is proposed, based on the optical microscope and Raman spectroscopy results. This method can obtain more accurate crystallization fraction than the common way. X-ray diffraction results showed that the films are strongly (1 1 1) orientated. A new region crystallization pattern in AIC was also proposed.