Optical characterization of PLD grown nitrogen-doped TiO2 thin films

Abstract Nitrogen-doped TiO 2 thin films were prepared by pulsed laser deposition (PLD) by ablating metallic Ti target with pulses of 248 nm wavelength in reactive atmospheres of O 2 /N 2 gas mixtures. The layers were characterized by UV–VIS spectrophotometry and variable angle spectroscopic ellipsometry with complementary profilometry for measuring the thickness of the films. Band gap and extinction coefficient values are presented for films deposited at different substrate temperatures and for varied N 2 content of the gas mixture. The shown tendencies are correlated to nitrogen incorporation into the TiO 2– x N x layers. It is shown that layers of significantly increased visible extinction coefficient with band gap energy as low as 2.89 eV can be obtained. A method is also presented how the spectroscopic ellipsometric data should be evaluated in order to result reliable band gap values.