New co-spray way to synthesize high quality ZnS films
Source abstract
Abstract
Abstract In the present study, we report for the first time the synthesis of ZnS films using co-spray method, in which the reactants were mixed in the vapor state contrary to that seen in previous spray configurations. In order to obtain the optimum conditions for growing high quality ZnS thin films related to this approach, a series of samples with different Zn:S atomic ratios were investigated. X-ray diffraction (XRD) analysis indicated that both solid state and phase formation were strongly dependent on Zn:S atomic ratio. In the absence of sulfur element, pure ZnO phase showing hexagonal wurtzite structure with (0 0 2) preferential orientation was obtained. When one eighth of sulfur was implicated, the (0 0 2) diffraction peak of ZnO was broadened and displaced toward lower angles. Once one quarter of sulfur was involved, no discernible diffraction peaks could be seen. Films deposited using solutions with Zn:S ratio of 1:1/2, 1:1 and 1:2 have pure ZnS phase showing hexagonal wurtzite structure with a strong preferential orientation. Near stoichiometric ZnS films were achieved with Zn:S atomic ratio close to 1:1. All films have high transmittance of about 80% in the visible region.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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