Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates

Abstract We examined the chemical, structural, mechanical and optical properties of amorphous hydrogenated silicon nitride thin films deposited by hot-wire chemical vapour deposition using SiH4, NH3 and H2 gases at total flow rates below 33 sccm. Time of flight secondary ion mass spectroscopy reveal that the film surfaces consist of predominantly Si with hydrogenated SixNyOz species. Energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy corroborate on the N/Si ratio. Electron energy loss spectroscopy discloses that the thickness of the nitrogen rich oxidized interface between the SiNx films and the c-Si substrate decrease with an enhancing NH3 flow rate. By varying the NH3 flow rate, dense SiNx films can be realized with hydrogen content between 16 and 9 at.%, a refractive index between 3.5 and 1.9 and optical band gap ranging from 2 to 4.5 eV. The SiNx film stress is compressive for N/Si 0.55. Mechanisms relating the HWCVD conditions and the film structure and properties are proposed.