Effect of Cu concentration on the formation of Cu1−x Znx shape memory alloy thin films

Abstract The CuxZn1−x (x = 0.06, 0.08, 0.1) deposits were fabricated by a electrodeposition method. The structural and electrical properties of the films were investigated by cyclic voltammetry (CV), X-ray diffraction (XRD), Scanning electron micrograph (SEM), and DC resistivity measurements. Phase identification of the samples was studied by the XRD patterns. XRD patterns shows the characteristics XRD peaks corresponding to the, β, and γ phases. The grain sizes of the samples were decreased whereas microstrain increased with the increase in Cu2+ substitution. The SEM study reveals the fine particle nature of the samples with increasing Cu content. DC resistivity indicates the metallic nature of the prepared samples. It has been found that the Cu ions have a critical influence on the resultant structure and resistivity properties of the Cu–Zn samples.