Photoinduced non-linear optical effects in the ZnS-Al, In–Sn doped film–glass nanometer-sized interfaces

Abstract The effective nanometer-sized thin layer (about 1–2 nm) located between a crystalline ZnS film and glass substrate is studied here using photoinduced optical and second-order non-linear optical (second harmonic generation (SHG) and electrooptics effects) techniques. A photoinduced shift of the effective energy gap is found for the first time in ZnS films doped with the same amount (4 at.%) of different elements, namely, In, Al and Sn. The photoinduced second-order non-linear optical properties (linear electrooptics (LEO) and SHG) of the specimens show a good correlation with the corresponding features of the linear optical susceptibilities, particularly, the imaginary part of dielectric susceptibility near the absorption edge. The maximal response of the photoinduced signal is observed for the pump–probe delaying time of about 20 ps. The performed experimental measurements indicate that the observed effects are stimulated by two factors: the first one is connected with the interface potential gradients at the glass–ZnS film boarder; the second one is a consequence of the additional polarization due to the insertion of Al, In and Sn atoms. The observed phenomenon may be proposed as a sensitive tool for investigation of thin semiconducting-glass interface layer. Moreover, such nanolayers may be applied in quantum electronic devices.