Modulation of the microstructure, optical and electrical properties of sputtering-driven Yb2O3 gate dielectrics by sputtering power and annealing treatment
Source abstract
Abstract
Abstract The effect of sputtering power and annealing temperature on the microstructure, optical and electrical properties of sputtering-derived Yb2O3 high-k gate dielectrics on Si substrate have been investigated systematically. Based on measurements by ultraviolet-visible spectroscope (UV-Vis) and spectroscopic ellipsometry (SE), the increase in band gap and reduction in refractive index have been detected. Structural analyses by x-ray diffraction (XRD) reveal that the Yb2O3 thin films exhibit a cubic phase at higher annealing temperature. X-ray photoelectron spectroscopy (XPS) analyses demonstrate the decreased Yb silicate and low-k SiO2 interfacial layer for the samples annealed at 300 °C. Electrical measurements have indicated that Yb2O3/Si gate stacks annealed at 300 °C shows excellent dielectric performance with leakage current density of 3.66 × 10−8 A/cm2 at applied voltage of 1 V. As a supplement, the leakage current conduction mechanisms of MOS capacitor for different annealing temperature have been discussed systematically.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Electronic and Structural Properties of Oxides
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