Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties
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OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Ga2O3 and related materials
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References (26)
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1. Nakamura · 2000
2. InGaN-GaN multiquantum-well blue and green light-emitting diodes10.1109/2944.999181 ↗
3. Characteristics of InGaN-Based UV/blue/green/amber/red light-emitting diodes10.1143/JJAP.38.3976 ↗
4. InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates with a fundamental transverse mode10.1143/JJAP.37.L1020 ↗
5. Control of quantum-confined stark effect in InGaN&z.urule;GaN multiple quantum well active region by p −type layer for III-nitride-based visible light emitting diodes10.1063/1.2894514 ↗
6. Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs10.1364/OE.21.008444 ↗
7. Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum well10.1016/j.physe.2015.10.010 ↗
8. Symmetrically tunable optical properties of InGaN/GaN multiple quantum disks by an external stress10.1063/1.4709397 ↗
9. Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs10.1016/j.spmi.2015.09.028 ↗
10. Characteristics of nanoporous InGaN/GaN multiple quantum wells10.1016/j.spmi.2014.03.012 ↗
11. Large-area suspended grapheme on GaN nanopillars10.1116/1.3654042 ↗
12. Nanoporous InGaN prepared by KOH electrochemical etching with different light sources10.1016/j.mee.2014.06.027 ↗
13. Self-standing nanoporous GaN membranes fabricated by UV-assisted electrochemical anodization10.1016/j.matlet.2015.01.078 ↗
14. Porosity-induced relaxation of strains at different depth of nanoporous GaN studied using the Z-scan of Raman spectroscopy10.1016/j.jallcom.2014.11.149 ↗
15. Chemical etch characteristics of N-face and Ga-face GaN by phosphoric acid and potassium hydroxide solutions10.1149/2.039202jes ↗
16. Nanopores in GaN by electrochemical anodization in hydrofluoric acid: formation and mechanism10.1063/1.4752259 ↗
17. The fabrication of large-area, free-standing GaN by a novel nanoetching process10.1088/0957-4484/22/4/045603 ↗
18. Temperature dependent growth of InGaN/GaN single quantum well10.1016/j.spmi.2012.05.018 ↗
19. Electrochemical properties of n-type GaN in oxalic acid solution under the pre-breakdown condition10.1016/j.jallcom.2015.08.115 ↗
20. Pores in III-V semiconductors10.1002/adma.200390043 ↗
21. Propagation of nanopores during anodic etching of n-InP in KOH10.1039/c3cp52253a ↗
22. Aligned mesopore arrays in GaN by anodic etching and photoelectrochemical surface etching10.1021/jp401890d ↗
23. Comparative columnar porous etching studies on n-type 6H SiC crystalline faces10.1002/pssb.200844024 ↗
24. Feenstra · 2008
25. Chandra · 1985
26. Resonant raman scattering in strained and relaxed InGaN/GaN multi-quantum wells