Structural and electrical properties of nitrogen-doped ZnO thin films
Source abstract
Abstract
Abstract ZnO and nitrogen-doped ZnO thin films were prepared onto glass substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system at room temperature. The influence of doping on the structural, electrical and optical properties of thin films was investigated. XRD studies were carried out to analyze and compare the structural quality of undoped and nitrogen-doped ZnO films. Raman measurement was performed to study the doping effects in the ZnO. The optical transmittances of all films are studied as a function of wavelength using UV–VIS–NIR spectrophotometer. The optical band gap values of the films are found using absorbance spectrums. The electrical studies for the films are carried out by using Hall-effect measurements.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (43)
Show source-provided references
1. Study on the ferromagnetism in Co and N doped ZnO thin films10.1016/j.cap.2013.05.010 ↗
2. A comprehensive review of ZnO materials and devices10.1063/1.1992666 ↗
3. High mobility formation of p-type Al doped ZnO:N films annealed under NH3 ambient10.1016/j.jpcs.2012.11.019 ↗
4. ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition10.1063/1.2199588 ↗
5. Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition10.1063/1.2900711 ↗
6. Excitonic ultraviolet lasing in ZnO-based light emitting devices10.1063/1.2718516 ↗
7. Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes10.1063/1.2908968 ↗
8. Structural and optical properties of nitrogen doped ZnO films10.1016/j.vacuum.2009.03.022 ↗
9. Temperature effect on the electrical, structural and optical properties of N-doped ZnO films by plasma-free metal organic chemical vapor deposition10.1016/j.apsusc.2009.01.077 ↗
10. Infrared spectroscopy of polycrystalline ZnO and ZnO:N thin films10.1016/j.jcrysgro.2005.04.053 ↗
11. Properties of N-doped ZnO thin films in annealing process10.1016/j.ssc.2007.07.004 ↗
12. Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy film10.1016/j.jallcom.2011.06.048 ↗
13. Thermal oxidation of n-type ZnN films made by rf-sputtering from a zinc nitride target, and their conversion into p-type films10.1016/j.spmi.2007.04.038 ↗
14. Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0001) substrates by magnetron sputtering10.1016/j.apsusc.2011.10.076 ↗
15. Effect of the crystallinity of MOCVD-grown ZnO:N on the diffusion of impurities10.1016/j.jcrysgro.2011.03.029 ↗
16. Investigation on the ZnO:N films grown on (0001) and (0001̄) ZnO templates by plasma-assisted molecular beam epitaxy10.1016/j.jcrysgro.2008.11.018 ↗
17. Growth and photoluminescence for undoped and N-doped ZnO grown on 6H-SiC substrate10.1016/j.jlumin.2006.01.073 ↗
18. Photoluminescence and resonant Raman scattering in N-doped ZnO thin films10.1016/j.optcom.2010.03.006 ↗
19. Properties of N-doped ZnO grown by DBD-PLD10.1016/j.tsf.2009.07.202 ↗
20. Filtered vacuum arc deposition of undoped and doped ZnO thin films: electrical, optical, and structural properties10.1016/j.surfcoat.2006.08.007 ↗
21. Device quality ZnO grown using a filtered cathodic vacuum arc10.1016/j.physb.2011.08.074 ↗
22. Structural and optical properties of ZnO thin films produced by filtered cathodic vacuum arc10.1016/S0040-6090(01)01452-3 ↗
23. Comprehensive study of ZnO films prepared by filtered cathodic vacuum arc at room temperature10.1063/1.1592007 ↗
24. Cathodic arc deposition with activated anode (CADAA) for preparation of in situ doped thin solid films10.1016/S0042-207X(01)00453-5 ↗
25. Electro-optical and structural properties of thin ZnO films, prepared by filtered vacuum arc deposition10.1016/j.tsf.2003.09.023 ↗
26. The effect of annealing on structural and optical properties of ZnO thin films grown by pulsed filtered cathodic vacuum arc deposition10.1088/0953-8984/18/27/021 ↗
27. Formation of metal oxides by cathodic arc deposition10.1016/0257-8972(95)02508-1 ↗
28. Influence of oxygen pressure of ZnO/glass substrate produced by pulsed filtered cathodic vacuum arc deposition10.1016/j.physb.2006.08.039 ↗
29. Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO10.1103/PhysRevB.63.075205 ↗
30. 2012 · 1
31. Growth and characterization of ZnO nanocrystalline thin films and nanopowder via low-cost ultrasonic spray pyrolysis10.1016/j.jcrysgro.2007.05.023 ↗
32. Nitrogen-doped -type ZnO films prepared from nitrogen gas radio-frequency magnetron sputtering10.1063/1.2337766 ↗
33. Influence of the reactive N2 gas flow on the properties of rf-sputtered ZnO thin films10.1016/j.tsf.2007.03.062 ↗
34. Nitrogen-related local vibrational modes in ZnO:N10.1063/1.1461903 ↗
35. Preparation of intrinsic and N-doped -type ZnO thin films by metalorganic vapor phase epitaxy10.1063/1.2132528 ↗
36. Raman analysis of nitrogen doped ZnO10.1016/j.tsf.2006.12.186 ↗
37. Raman scattering and band-gap variations of Al-doped ZnO nanoparticles synthesized by a chemical colloid process10.1088/0022-3727/42/9/095420 ↗
38. Tauc · 1979 · 159
39. The long-wavelength edge of photographic sensitivity and electronic absorption of solids10.1103/PhysRev.92.1324 ↗
40. Investigation of structural, optical and luminescent properties of sprayed N-doped zinc oxide thin films10.1016/j.jaap.2012.06.007 ↗
41. Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering10.1016/j.apsusc.2008.05.321 ↗
42. Effect of nitrogen doping on bonding state of ZnO thin films10.1116/1.2778687 ↗
43. p-type behavior in Na-doped ZnO films and ZnO homojunction light-emitting diodes10.1016/j.ssc.2008.07.028 ↗