Focused ion beam sputtering investigations on SiC
Source abstract
Abstract
The focused ion beam (FIB) is a very useful tool to sputter holes with well-defined dimensions which can be easily analysed by surface profiling measurements. Applying this the sputtering yields of 6H:SiC were measured for 35 and 70 keV Si, Co, Ge, Nd and Au ions from a mass separated FIB. Additionally, the sputtering yield was determined as a function of the angle of incidence and the target temperature for gold ions. The swelling due to ion implantation will be discussed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
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