Effects of deposition temperatures and annealing conditions on the microstructural, electrical and optical properties of polycrystalline Al-doped ZnO thin films

Abstract Al-doped ZnO (AZO, ZnO:Al2O3 = 98:2 wt%) films are deposited on different substrates by an RF magnetron sputtering and subsequently annealed at three different conditions to investigate the microstructural, electrical, and optical properties. X-ray diffraction and scanning electron microscope results show that all the samples are polycrystalline and the samples rapid-thermal-annealed at 900 °C in an N2 ambient contain larger grains compared to the furnace-annealed samples. It is shown that the sample deposited at room temperature on the sapphire gives a resistivity of 5.57 × 10−4 Ω cm when furnace-annealed at 500 °C in a mixture of N2:H2 (9:1). It is also shown that the Hall mobility vs. carrier concentration (μ–n) relation is divided into two groups, depending on the annealing conditions, namely, either rapid-thermal annealing or furnace annealing. The relations are described in terms of either grain boundary scattering or ionized impurity scattering mechanism. In addition, the samples produce fairly high transmittance of 91–96.99% across the wavelength region of 400–1100 nm. The optical bandgaps of the samples increase with increasing carrier concentration.