journal article·2015-10

Nanostructuring of Ta2O5 surfaces by low energy Ar+ bombardment

Noelia Benito, Carlos Palacio

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Abstract

Abstract The surface modifications undergoing on a Ta2O5 surface bombarded with Ar+ have been studied using surface analysis techniques (XPS, ARXPS and AFM). It has been observed that ion bombardment produces an altered layer composed of Ta suboxides as a consequence of the preferential sputtering of oxygen atoms. ARXPS measurements carried out on the bombarded surfaces can be explained using a model in which the altered layer consist of suboxide islands, with coverage 85% and thickness 2.88 nm. Moreover, AFM measurements show that ion bombardment leads to the formation of short-range hexagonal order nanostructures with characteristic parameters fully consistent with those found in ARXPS for the island model, therefore indicating the close relationship between the nanostructuring of the surface and the altered layer formed during bombardment.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Ion-surface interactions and analysis · Semiconductor materials and devices · Diamond and Carbon-based Materials Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (26)

Show source-provided references
1. Use of Auger electron spectroscopy and inert gas sputtering for obtaining chemical profiles10.1116/1.1316542 ↗
2. Characterization of coatings10.1016/0040-6090(76)90620-9 ↗
3. Auger study of preferred sputtering on binary alloy surfaces10.1016/0039-6028(76)90191-6 ↗
4. Carter · 1983 · 231
5. Formation of ordered nanoscale semiconductor dots by ion sputtering10.1126/science.285.5433.1551 ↗
6. Theory of ripple topography induced by ion bombardment10.1116/1.575561 ↗
7. Spontaneous pattern formation induced by ion bombardment of binary compounds
8. A surface layer of altered composition can play a key role in nanoscale pattern formation induced by ion bombardment10.1016/j.apsusc.2011.07.003 ↗
9. XPS-AES study of the surface composition of GaSb single crystal irradiated with low energy Ar ions10.1016/j.surfcoat.2011.12.046 ↗
10. Quantitative XPS analysis of the surface layer of anodic oxides obtained during depth profiling by sputtering with 3 keV Ar+ ions
11. Dielectric properties of anodic tantalum oxide grown on sputtered tantalum nitride10.1016/0040-6090(79)90263-3 ↗
12. Data analysis in x-ray photoelectron spectroscopy
13. XPS depth-profile of the suboxide distribution at the native oxide/Ta interface10.1016/j.elspec.2008.10.004 ↗
14. Quantitative evaluation of AES-depth profiles of thin anodic oxide films (Ta2O5/Ta, Nb2O5/Nb)10.1002/sia.740050507 ↗
15. Composition of Ta2O5 stacked films on N2O- and NH3-nitride Si10.1016/j.apsusc.2006.05.116 ↗
16. In situ spectroscopic observation of activation and transformation of tantalum suboxides10.1021/jp910964s ↗
17. Spectral interpretation
18. CASA XPS software Ltd., V2.0 User's Manual, www.casaxps.com.
19. Depth profile analysis of thin oxide films by auger electron spectroscopy
20. J.F. Ziegler, J.P. Biersack, M.D. Ziegler, 2008 SRIM—The Stopping and Range of Ions in Matter (SRIM Co.), www.srim.org.
21. XPS and ARXPS study of silver underpotential deposition on platinum in acid solution10.1016/S0022-0728(03)00105-0 ↗
22. Samsonov · 1973 · 34
23. Calculation of electron inelastic mean free paths (IMFPs) VII. Reliability of the TPP-2M IMFP predictive equation10.1002/sia.1526 ↗
24. Production of nanohole/nanodot patterns on Si(001) by ion beam sputtering with simultaneous metal incorporation
25. Nanotec AFM software, V5.0, 2012, www.nanotec.es.
26. Gwyddion SPM software, V2.26, http://gwyddion.net.