Fabrication of Schottky barrier diodes on clump of gallium nitride nanowires grown by chemical vapour deposition
Source abstract
Abstract
Abstract In this study, Schottky barrier diodes on ‘clump of nanowires’ has been fabricated and its electrical behaviour on variation of distance of separation between Ohmic (Ti/Al/Ni/Au) and Schottky (Ni/Au) contacts has been studied. The variations in current under dark and bright conditions have been investigated. High quality gallium nitride nanowires were grown by chemical vapour deposition technique using gold-palladium alloy as catalyst. The novelty of this work is that, the barrier height remains unaffected irrespective of any variations in the ideality factor. Also, the method of lithography during fabrication did not give rise to any surface related inhomogeneities.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design
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References (42)
Show source-provided references
1. Structural evolution and growth mechanism of self-assembled wurtzite gallium nitride (GaN) nanostructures by chemical vapor deposition10.1021/jp3120572 ↗
2. GaN based nanorods for solid state lighting10.1063/1.3694674 ↗
3. Ultrasensitive and highly selective photodetections of UV-A rays. based on individual bicrystalline GaN nanowire10.1021/acsami.6b14907 ↗
4. PiN InGaN nanorod solar cells with high short-circuit current10.7567/APEX.8.042302 ↗
5. GaN nanowire/thin film vertical structure p–n junction light-emitting diodes10.1063/1.4860971 ↗
6. In situ analysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires10.1088/0957-4484/21/24/245705 ↗
7. Elastic strain relaxation in GaN/AlN nanowire superlattice10.1103/PhysRevB.81.153306 ↗
8. Si donor incorporation in GaN nanowires10.1021/acs.nanolett.5b02634 ↗
9. Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting10.1038/ncomms4825 ↗
10. Thermal management of GaN-on-diamond high electron mobility transistors: effect of the nanostructure in the diamond near nucleation region
11. Toward intraoperative detection of disseminated tumor cells in lymph nodes with silicon nanowire field effect transistors10.1021/acsnano.5b07136 ↗
12. Direct imaging of p–n junction in core-shell GaN wires10.1021/nl5010493 ↗
13. Room temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold10.1038/srep05014 ↗
14. Structural and optical properties of disc-in-wire InGaN/GaN LEDs10.1021/nl503826k ↗
15. Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the schottky nanocontact10.1039/C7NR00647K ↗
16. Modeling the semiconductor devices with negative differential resistance based on nitride nanowires10.1088/1742-6596/690/1/012041 ↗
17. Vertically stacked photodetector devices containing silicon nanowires with engineered absorption spectra10.1021/ph500463r ↗
18. GaN nanowire field emitters with the adsorption of Pt nanoparticles10.1039/C7RA02568H ↗
19. Formation of ultralong GaN nanowires up to millimeter length scale and photoconduction study in single nanowire10.1016/j.scriptamat.2017.05.039 ↗
20. Vapour-Liquid-Solid mechanism of single crystal growth10.1063/1.1753975 ↗
21. Catalyst-free deposition of few layer graphene on c-plane sapphire substrates by drop casting technique10.1007/s10854-017-8388-y ↗
22. Growth of gold-palladium alloy catalyzed gallium nitride nanowires by chemical vapour deposition10.1016/j.matlet.2018.01.059 ↗
23. High speed MSM photodetector based on Ge nanowires network10.1088/1361-6641/aa65b4 ↗
24. Indium Tin oxide nanowire networks as effective UV/Vis photodetection platforms10.1021/jp506074c ↗
25. Electrical and structural characteristics of Ge-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering10.1016/j.mssp.2017.10.024 ↗
26. Structural and electrical characteristics of GaN, n-GaN and A1xGa1− xN10.1016/j.jallcom.2015.09.102 ↗
27. Effect of surface morphology on diode performance in vertical GaN schottky diodes10.1149/2.0221711jss ↗
28. Effect of V/III ratio on the surface morphology and electrical properties of m–plane (10–10) GaN homoepitaxial layers10.1016/j.jcrysgro.2016.12.012 ↗
29. Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10–9 A and a high rectification ratio above 10510.1016/j.mseb.2017.04.008 ↗
30. Enhanced UV detection by non-polar epitaxial GaN films10.1063/1.4930199 ↗
31. GaN nanorod Schottky and p−n junction diodes10.1021/nl062152j ↗
32. Current transport mechanism in a metal–GaN nanowire Schottky diode10.1088/0957-4484/18/49/495701 ↗
33. Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition10.1063/1.2215354 ↗
34. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes10.1038/srep27553 ↗
35. The formation and characterization of electrical contacts (Schottky and Ohmic) on gallium nitride nanowires10.1088/0022-3727/41/10/105103 ↗
36. High-temperature characteristics of GaN nano-Schottky diodes10.1016/j.physe.2008.04.007 ↗
37. Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates10.1016/j.jcrysgro.2015.12.044 ↗
38. Synthesis and properties of GaN. Nanowires by RF magnetron sputtering
39. Sputter deposition of gallium nitride films using a GaAs target10.1016/S0040-6090(98)00550-1 ↗
40. Multiphonon resonant Raman scattering in non-polar GaN epilayers10.1063/1.4897643 ↗
41. Cu catalyst assisted growth of GaN nanowires on sapphire substrate for p-type behavior10.1016/j.ijleo.2016.01.023 ↗
42. Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (11–20) sapphire grown by rf-molecular beam epitaxy10.1039/C5RA10099B ↗