B4C/Mo/Si and Ta2O5/Ta nanostructures analysed by ultra-low energy argon ion beams

Abstract Ultra-low energy ion bombardment was applied for depth profiling of B 4 C/Mo/Si and Ta 2 O 5 /Ta nanostructures. The experiments were performed with argon ion beams of 180, 380, 880, 2000 and 4000 eV energies and 45° incidence angle. Sub-nanometer depth resolution of both structures is achieved at 880 eV. Performed MC SRIM’96 simulations allow to characterise altered layer formation during bombardment of B 4 C, Si, Mo, Ta and Ta 2 O 5 matrices. Energy dependence of recoil effects and sputtering coefficient, allows suggesting suitable energies for experimental SIMS depth profiling of structures composed of these matrices. For B 4 C matrix the recommended argon beam energy range is 800–550 eV and for Si it is 400–200 eV. For Ta 2 O 5 , lowering energy below 600 eV does not reduce the number of recoil effects. The results generally agree with the experimental data of depth profile resolution, measured at Mo/Si and Ta 2 O 5 /Ta interfaces.