The effect of geometry and post-annealing on surface acoustic wave characteristics of AlN thin films prepared by magnetron sputtering
Source abstract
Abstract
Abstract This paper describes experimental relationship between surface acoustic wave (SAW) properties of two-port SAW resonators based on polycrystalline aluminum nitride (AlN) thin films grown on Si substrates by using a pulsed reactive magnetron sputtering system and their geometry's parameters. Moreover, the influence of post-deposition heat treatment on SAW properties of AlN thin films was investigated at different annealing temperature (600 °C and 900 °C). The measurement results show the number of the inter-digital transducers (IDT) finger pairs ( N ), the number of reflectors grating pairs ( R ) and the IDT center-to-center distance ( L ) related to insertion loss of SAW resonators. The best result of insertion loss was 15.6 dB for SAW resonators with R = 160 pair, N = 5 pair and L = 750 μm. At the same geometry parameters, the SAW velocity and insertion loss were improved slightly after annealing at 600 °C and were worse for the films annealed at 900 °C by changes in the surface morphology and stress on the film.
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Research context
OpenAlex topics: Acoustic Wave Resonator Technologies · GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics
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References (15)
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