Structural, optical, and electrical characteristics of AlN:Ho thin films irradiated with 700 keV protons
Source abstract
Abstract
Abstract Effects of proton irradiation on Ho doped AlN thin films are investigated. The irradiation is performed in the dose range of 1013 to 1014 ions/cm2 at room temperature. The effect of proton bombardment is studied through a systematic investigation of the structural properties using Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction (XRD), and X-ray Photoemission Spectroscopy (XPS). The optical properties and the band gap change after irradiation process are studied using Defuse Reflectance Spectroscopy (DRS) technique. The electrical behavior of the material is also investigated after irradiation of AlN:Ho. The results show that high-energy protons cause a band gap change in the material, which can be exploited in developing various applications.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Acoustic Wave Resonator Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
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