Properties of copper-doped ZnTe thin films by immersion in Cu solution
Source abstract
Abstract
Abstract ZnTe thin films, prepared by two-sourced evaporation of zinc and tellurium, were immersed in Cu(NO3)2–H2O solution for different time periods. The sheet resistance drastically decreased due to Cu diffusion in the films. Structure of the films is studied by X-ray diffraction (XRD), while the optical properties, such as film thickness, refractive index, absorption coefficient and optical band gap have been calculated from the normal transmission spectra in the range 400–2000 nm.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
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References (15)
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