Influence of absolute argon and oxygen flow values at a constant ratio on the growth of Zn/ZnO nanostructures obtained by DC reactive magnetron sputtering

Abstract In the present work we analyze the growth mechanism of Zn/ZnO nanostructured thin films obtained by DC reactive magnetron sputtering with variable absolute gas flow values. Zn target was sputtered at 80 W DC power with variable absolute Ar:O 2 flow values at a set ratio, in sccm: 3:0.3, 6:0.6, 8:0.8, 10:1, 15:1.5, 20:2 and 30:3. We obtained unique Zn/ZnO nanoflowers with morphology and properties changing as a function of gas flow values from dendritic/nanopetal structures for low flow to dense porous films for high flow. Zn core/ZnO shell composition results from surface oxidation of Zn crystallites to 4 nm thick ZnO after exposure to atmospheric air that causes an increase in resistivity especially for denser, more porous films. Taking into account that the plasma properties measures using the Langmuir probe and optical emission spectroscopy remain constant as a function of gas flow values, we put forward that the structural evolution of films is influenced by oxygen incorporating into the film surface acting as an inhibitor − incorporating into the films and decreasing crystallite sizes and amorphizing the film structure.