Characterization of DC reactive magnetron sputtered NiO films using spectroscopic ellipsometry
Source abstract
Abstract
Abstract Thin NiO films were deposited at 500 °C on n-type Si(1 1 1) by a DC reactive magnetron sputtering in a gas mixture of oxygen and argon. The ratio between the flow rates of oxygen and argon was respectively set at 1:4, 1:2, and 1:1. The dependence of structures and optical properties of NiO films were investigated using grazing incidence X-ray diffraction and spectroscopic ellipsometry in the spectral region of 1.5–5.0 eV. Ni-rich NiO films were obtained when the ratio between the flow rates of oxygen and argon was 1:4 and 1:2 in sputtering process. And when the ratio was 1:1, a relatively pure NiO film was formed. The partial pressure of oxygen could significantly influence the thickness and roughness of films. Refractive index n , extinction coefficient k , and direct gap energy and indirect gap energy of the NiO films were also subject to the influence of the partial pressure of oxygen.
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Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · ZnO doping and properties · Thin-Film Transistor Technologies
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References (20)
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