journal article·2014-02

Structure and properties of TiAlLaN films deposited at various bias voltages

Hao Du, Ji Xiong, Haibo Zhao, Yuemei Wu, Weicai Wan, Linlin Wang

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Abstract

Abstract The TiAlLaN films were deposited on YG8 and silicon (1 1 1) substrates by a hybrid PVD coater which is combined with medium frequency reactive magnetron sputtering and ion-plating evaporation. The effects of lanthanum addition and bias voltages on the composition, crystal morphology, microstructure, mechanical properties, and oxidation resistance of the TiAlLaN films were investigated systematically. With lanthanum addition in the TiAlN film, the crystal morphology changed from columnar to equiaxial, and the grain refinement accompanied by the increase of hardness and elastic modulus was found. The indentation adhesion test showed that the adhesion strength was deteriorated by adding lanthanum in the deposited film; however, the scratch adhesion test expressed a better morphology of the scratch track line for the TiAlLaN film. With the substrate bias increasing, the elements concentration of films were alternated, and the equiaxial crystals were turned to columnar crystals. The oxidation resistance of the deposited films increased with the increase of bias voltage. The adhesion qualities, which are affected by the increasing hardness and elastic modulus, were worse for the TiAlLaN films under higher bias voltages. The TiAlLaN film under the bias of −10 V showed the highest H/E ratio.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Metal and Thin Film Mechanics · GaN-based semiconductor devices and materials · Diamond and Carbon-based Materials Research

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